NTE5369 Silicon Controlled Rectifier (SCR) for High Speed Switching, 125 Amp, TO83 Absolute Maximum Ratings: Repetitive Peak OffState Voltage (Note 1), V .................................... 1200V DRM Non Repetitive Peak OffState Voltage (Note 1), V ............................... 1200V DSM Repetitive Peak Reverse Voltage (Note 1), V ..................................... 1200V RRM Non Repetitive Peak Reverse Voltage (Note 1), V ................................ 1300V RSM Peak Forward Leakage Current, I ............................................... 15mA DRM Peak Reverse Leakage Current, I ............................................... 15mA RRM Maximum Average On State Current (Note 2), I T(AV) T = +55C ................................................................. 128A C T = +85C .................................................................. 83A C Nominal RMS On State Current (T = +25C, Note 2), I .......................... 260A C T(RMS) DC On State Current (T = +25C), I ............................................ 206A C T(DC) Peak Non Repetitive Surge Current (t = 10ms, Note 3), I p TSM V = 0.6V ............................................................ 1700A RM RRM V 10V ................................................................ 1950A RM 2 2 I t Capacity for Fusing (t = 10ms, Note 3), I t p 2 V = 0.6V ......................................................... 19000A s RM RRM 2 V 10V ............................................................. 13700A s RM Critical Rate of Rise of On State Current (Note 4), (di/dt) cr Repetitive ............................................................... 500A/s Non Repetitive ......................................................... 1000A/s Peak Reverse Gate Voltage, V .................................................... 5V RGM Mean Forward Gate Power, P .................................................. 1.5W G(AV) Peak Forward Gate Power, P ..................................................... 30W GM Operating Temperature Range, T .......................................... 40 to +125C J Storage Temperature Range, T .......................................... 40 to +150C stg Thermal Resistance, Junction toCase, R ..................................... 0.23K/W thJC Thermal Resistance, Case toSink, R ......................................... 0.08K/W thCS Note 1. De rating factor of 0.13% per C is applicable for T below +25C. J Note 2. Single phase 50Hz, 180 halfsinewave. Note 3. Halfsinewave, +125C T initial. J Note 4. V = 67% V , I = 2A, t 0.5s, T = +125C. D DRM FG r C Rev. 1211Electrical Characteristics: (T = +125C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Maximum Peak OnState Voltage V I = 280A 2.3 V TM TM I = 384A 2.6 V TM Threshold Voltage V 1.6 V TO Slope Resistance r 2.49 V T Critical Rate of Rise of Off-State Voltage (dv/dt) V = 80% V , Linear Ramp, Gate O/C 200 V/s cr D DRM Peak OffState Current I Rated V 20 mA DRM DRM Peak Reverse Current I Rated V 20 mA RRM RRM Gate Trigger Voltage V Rated V , V = 10V, I = 3A, T = +25C 3.0 V GT DRM D T J Gate Trigger Current I 200 mA GT Gate NonTrigger Voltage V 0.25 V GD Holding Current I T = +25C 600 mA H J Gate Controlled TurnOn Delay Time t 0.4 1.0 s V = 67% V , I = 500A, gd D DRM TM di/dt = 10A/s, I = 2A, t = 0.5s, FG r TurnOn Time t 0.8 2.0 s gt T = +25C Recovered Charge Q I = 100A, t = 500s, di/dt = 10A/s, 50 C rr TM p V = 50V R Recovered Charge, 50% Chord Q 25 45 C ra Reverse recovery Current I 15 A rm Reverse Recovery Time t 3.0 s rr Turn Off Time t I = 100A, t = 500s, V = 50V, 10 15 s q TM p R di/dt = 10/s, V = 80% V , DR DRM dV /dt = 20V/s r I = 100A, t = 500s, V = 50V, 20 25 s TM p R di/dt = 10/s, V = 80% V , DR DRM dV /dt = 200V/s r