V = 2800 V DRM Phase Control Thyristor I = 1400 A T(AV)M I = 2210 A T(RMS) 3 I = 1810 A TSM 5STP 16F2800 V = 0.82 V T0 r = 0.37 m : T Doc. No. 5SYA1022-04 May 12 x Patented free-floating silicon technology x Low on-state and switching losses x Designed for traction, energy and industrial applications x Optimum power handling capability Blocking 1) Maximum rated values Parameter Symbol Conditions 5STP 16F2800 Unit Max repetitive peak forward V f = 50 Hz, t = 10 ms, 2800 V DRM, p and reverse blocking voltage V T = 5125C, Note 1 RRM vj Critical rate of rise of dv/dt Exp. to 1880 V, T = 125C 1000 V/s crit vj commutating voltage Characteristic values Parameter Symbol Conditions min typ max Unit Forward leakage current I V , T = 125C 200 mA DRM DRM vj Reverse leakage current I V , T = 125C 200 mA RRM RRM vj Note 1: Voltage de-rating factor of 0.11% per C is applicable for Tvj below +5 C Mechanical data 1) Maximum rated values Parameter Symbol Conditions min typ max Unit Mounting force F 14 22 24 kN M 2 Acceleration a Device unclamped 50 m/s 2 Acceleration a Device clamped 100 m/s Characteristic values Parameter Symbol Conditions min typ max Unit Weight m 0.6 kg Housing thickness H F = 22 kN, T = 25 C 25.9 26.3 mm M a Surface creepage distance D 25 mm S Air strike distance D 14 mm a 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5STP 16F2800 On-state 1) Maximum rated values Parameter Symbol Conditions min typ max Unit Average on-state current I Half sine wave, T = 70 C 1400 A T(AV)M c RMS on-state current I 2210 A T(RMS) 3 Peak non-repetitive surge I t = 10 ms, T = 125 C, sine wave 1810 A TSM p vj current after surge: V = V = 0 V D R 2 6 2 Limiting load integral I t 1.6210 A s 3 Peak non-repetitive surge I t = 8.3 ms, T = 125 C, sine wave 1910 A TSM p vj current after surge: V = V = 0 V D R 2 6 2 Limiting load integral I t 1.510 A s Characteristic values Parameter Symbol Conditions min typ max Unit On-state voltage V I = 2000 A, T = 125 C 1.55 V T T vj Threshold voltage V I = 800 A - 2400 A, T = 125 C 0.82 V (T0) T vj Slope resistance r 0.37 m : T Holding current I T = 25 C 75 mA H vj T = 125 C 60 mA vj Latching current I T = 25 C 500 mA L vj T = 125 C 200 mA vj Switching 1) Maximum rated values Parameter Symbol Conditions min typ max Unit Critical rate of rise of on- di/dt T = 125 C, Cont. 150 A/s crit vj state current I = 2000 A, f = 50 Hz TRM Critical rate of rise of on- di/dt Cont. 1000 A/s V d 1880 V, crit D state current I = 2 A, t = 0.5 s f = 1Hz FG r Circuit-commutated turn-off t T = 125C, I = 2000 A, 800 s q vj TRM time V = 200 V, di /dt = -1.5 A/s, R T V d 0.67 V , dv /dt = 20 V/s D DRM D Characteristic values Parameter Symbol Conditions min typ max Unit Reverse recovery charge Q T = 125C, I = 2000 A, 780 2000 As rr vj TRM V = 200 V, R Reverse recovery current I 30 55 A RM di /dt = -1.5 A/s T Gate turn-on delay time t T = 25 C, V = 0.4 V , I = 2 A, 3 s gd vj D RM FG t = 0.5 s r ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1022-04 May 12 page 2 of 7