X-On Electronics has gained recognition as a prominent supplier of 96SD3-4G1600NN-AP Memory Modules across the USA, India, Europe, Australia, and various other global locations. 96SD3-4G1600NN-AP Memory Modules are a product manufactured by Advantech. We provide cost-effective solutions for Memory Modules, ensuring timely deliveries around the world.

96SD3-4G1600NN-AP Advantech

96SD3-4G1600NN-AP electronic component of Advantech
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Part No.96SD3-4G1600NN-AP
Manufacturer: Advantech
Category: Memory Modules
Description: Memory Modules 4G SO-DDR3-1600 204PIN 256X8 HYX(G)
Datasheet: 96SD3-4G1600NN-AP Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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We are delighted to provide the 96SD3-4G1600NN-AP from our Memory Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 96SD3-4G1600NN-AP and other electronic components in the Memory Modules category and beyond.

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Apacer Technology Inc. CUSTOMER: APPROVAL SHEET APPROVED NO. : 90004-T0014 ISSUE DATE : May-17-2012 MODULE PART NO. : 78.B2GCJ.AF10C PCB PART NO. : 48.18220.091 IC Brand : Hynix DESCRIPTION : DDR3 SODIMM 12800-11 256x8 4GB HYN G CUSTOMER APPROVAL : Apacer Technology Inc. Authorized by : Steven Wang Apacer Memory Product Specification 4GB DDR3 SDRAM SODIMM with SPD Ordering Information Component Number of Part Number Bandwidth Speed Grade Max Frequency CAS Latency Density Organization Composition Rank 1600Mbps 800MHz CL11 78.B2GCJ.AF10C 12.8GB/sec 4GB 512Mx64 256Mx8*16EA 2 Specifications Features On Dimm Thermal Sensor: No Double-data-rate architecture two data transfers per clock cycle Density: 4GB The high-speed data transfer is realized by the 8 bits Organization prefetch pipelined architecture 512M words 64 bits, 2 ranks Bi-directional differential data strobe (DQS and /DQS) Mounting 16 pieces of 2G bits DDR3 SDRAM sealed is transmitted/received with data for capturing data at in FBGA the receiver Package: 204-pin socket type small outline dual in DQS is edge-aligned with data for READs center- line memory module (SO-DIMM) aligned with data for WRITEs PCB height: 30.0mm Differential clock inputs (CK and /CK) Lead pitch: 0.6mm (pin) DLL aligns DQ and DQS transitions with CK Lead-free (RoHS compliant) transitions Power supply: VDD = 1.5V 0.075V Commands entered on each positive CK edge data and data mask referenced to both edges of DQS Eight internal banks for concurrent operation (components) Data mask (DM) for write data Interface: SSTL 15 Posted /CAS by programmable additive latency for Burst lengths (BL): 8 and 4 with Burst Chop (BC) better command and data bus efficiency /CAS Latency (CL): 6, 7, 8, 9, 10, 11 On-Die-Termination (ODT) for better signal quality Synchronous ODT /CAS write latency (CWL): 5, 6, 7, 8 Dynamic ODT Precharge: auto precharge option for each burst access Asynchronous ODT Refresh: auto-refresh, self-refresh Multi Purpose Register (MPR) for temperature read Refresh cycles out Average refresh period ZQ calibration for DQ drive and ODT 7.8 s at 0C TC +85C Programmable Partial Array Self-Refresh (PASR) 3.9 s at +85C < TC +95C /RESET pin for Power-up sequence and reset Operating case temperature range function TC = 0C to +95C SRT range: Normal/extended Auto/manual self-refresh Programmable Output driver impedance control

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
ADVANTECH B+B SMARTWORKS
Advantech Corp
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