X-On Electronics has gained recognition as a prominent supplier of AQD-D4U8GN24-HE Memory Modules across the USA, India, Europe, Australia, and various other global locations. AQD-D4U8GN24-HE Memory Modules are a product manufactured by Advantech. We provide cost-effective solutions for Memory Modules, ensuring timely deliveries around the world.

AQD-D4U8GN24-HE Advantech

AQD-D4U8GN24-HE electronic component of Advantech
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Part No.AQD-D4U8GN24-HE
Manufacturer: Advantech
Category: Memory Modules
Description: Advantech Corporation 8G DDR4-2400 1GX8 1.2V HYX
Datasheet: AQD-D4U8GN24-HE Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 101.6178 ea
Line Total: USD 101.62 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 101.6178

   
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We are delighted to provide the AQD-D4U8GN24-HE from our Memory Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AQD-D4U8GN24-HE and other electronic components in the Memory Modules category and beyond.

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288Pin DDR4 2400 1.2V U-DIMM 8GB Based on 1024Mx8 AQD-D4U8GN24-HE Advantech AQD-D4U8GN24-HE Datasheet Rev. 0.0 2016-12-08 1 288Pin DDR4 2400 1.2V U-DIMM 8GB Based on 1024Mx8 AQD-D4U8GN24-HE Description Data Buffer data strobes DQS0 tDQS17 t AQD-D4U8GN24-HE is a DDR4 2400Mbps U-DIMM Data Buffer data strobes DQS0 cDQS17 c high-speed, memory module that use 8pcs of 1024Mx 8 SDRAM clocks CK0 t, CK1 t bits DDR4 SDRAM in FBGA package and a 4K bits serial SDRAM clocks CK0 c, CK1 c EEPROM on a 288-pin printed circuit board. ODT0 &ODT1 On-die termination control line AQD-D4U8GN24-HE is a Dual In-Line Memory Module CS0 nCS3 n DIMM Rank Select Lines input. and is intended for mounting into 288-pin edge connector 2 RAS n Row address strobe sockets. 3 Synchronous design allows precise cycle control with the CAS n Column address strobe 4 use of system clock. Data I/O transactions are possible WE n Write Enable on both edges of DQS. Range of operation frequencies, DM0~DM7 Data masks/high data strobes programmable latencies allow the same device to be VDD Core power supply useful for a variety of high bandwidth, high performance VDDQ I/O driver power supply memory system applications. V CA Command/address reference supply REF Features V SPD SPD EEPROM power supply DD RoHS compliant products. JEDEC standard 1.2V(1.14V~1.26V) Power supply I2C serial bus address select for SA0~SA2 VDDQ= 1.2V(1.14V~1.26V) EEPROM VPP = 2.5V +0.25V / -0.125V SCL I2C serial bus clock for EEPROM Data transfer rates: PC3-12800 SDA I2C serial bus data for EEPROM Programmable CAS Latency: VSS Ground 10,11,12,13,14,15,16,17,18 RESET n Set DRAMs Known State 8 bit pre-fetch VTT DRAM I/O termination supply Burst Length (BL) switch on-the-fly BL8 or BC4 VPP SDRAM Supply Bi-directional Differential Data-Strobe SDRAM ALERT n On Die Termination, Nominal, Park, and Dynamic ODT ALERT n SPD signals a thermal event has Serial presence detect with EEPROM EVENT n occurred Asynchronous reset Reserved for future use RFU PCB edge connector treated with 30u Gold-Plating 1. Address A17 is not valid for x8 and x16 based SDRAMs. For UDIMMs Pin Identification this connection pin is NC. Symbol Function 2. RAS n is a multiplexed function with A16. 1 A0A17 , BA0~BA1 Address/Bank input 3. CAS n is a multiplexed function with A15. DQ0~DQ63 Bi-direction data bus. 4. WE n is a multiplexed function with A14. 2

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
ADVANTECH B+B SMARTWORKS
Advantech Corp
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