Low Capacitance, Low Charge Injection, 15 V/12 V iCMOS, Dual SPDT Switch Data Sheet ADG1236 FEATURES FUNCTIONAL BLOCK DIAGRAM 1.3 pF off capacitance ADG1236 S1A 3.5 pF on capacitance D1 1 pC charge injection S1B 33 V supply range 120 on resistance IN1 Fully specified at +12 V, 15 V No V supply required L IN2 3 V logic-compatible inputs S2A Rail-to-rail operation D2 16-lead TSSOP and 12-lead LFCSP packages S2B Typical power consumption: <0.03 W APPLICATIONS SWITCHES SHOWN FOR A LOGIC 1 INPUT Automatic test equipment Figure 1. Data acquisition systems Battery-powered systems Sample-and-hold systems Audio/video signal routing Communication systems GENERAL DESCRIPTION Each switch conducts equally well in both directions when on The ADG1236 is a monolithic CMOS device containing two and has an input signal range that extends to the supplies. In the independently selectable SPDT switches. It is designed on an off condition, signal levels up to the supplies are blocked. Both iCMOS process. iCMOS (industrial CMOS) is a modular switches exhibit break-before-make switching action for use in manufacturing process combining high voltage complementary multiplexer applications. metal-oxide semiconductor (CMOS) and bipolar technologies. It enables the development of a wide range of high performance PRODUCT HIGHLIGHTS analog ICs capable of 33 V operation in a footprint that no 1. 1.3 pF off capacitance (15 V supply). previous generation of high voltage devices has been able to 2. 1 pC charge injection. achieve. Unlike analog ICs using conventional CMOS processes, 3. 3 V logic-compatible digital inputs: V = 2.0 V, V = 0.8 V. IH IL iCMOS components can tolerate high supply voltages while 4. No V logic power supply required. L providing increased performance, dramatically lower power 5. Ultralow power dissipation: <0.03 W. consumption, and reduced package size. 6. 16-lead TSSOP and 12-lead 3 mm 3 mm LFCSP packages. The ultralow capacitance and charge injection of the device make it an ideal solution for data acquisition and sample-and- hold applications, where low glitch and fast settling are required. Fast switching speed coupled with high signal bandwidth makes the device suitable for video signal switching. iCMOS construction ensures ultralow power dissipation, making the device ideally suited for portable and battery-powered instruments. Rev. A Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No Tel: 781.329.4700 20052016 Analog Devices, Inc. All rights reserved. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. 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Technical Support www.analog.com 04776-001ADG1236 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Absolute Maximum Ratings ............................................................6 Applications ....................................................................................... 1 ESD Caution...................................................................................6 Functional Block Diagram .............................................................. 1 Truth Table for Switches ...............................................................6 General Description ......................................................................... 1 Pin Configurations and Function Descriptions ............................7 Product Highlights ........................................................................... 1 Terminology .......................................................................................8 Revision History ............................................................................... 2 Typical Performance Characteristics ..............................................9 Specif icat ions ..................................................................................... 3 Test Circuits ..................................................................................... 12 Dual Supply ................................................................................... 3 Outline Dimensions ....................................................................... 14 Single Supply ................................................................................. 5 Ordering Guide .......................................................................... 14 REVISION HISTORY 3/16Rev. 0 to Rev. A Changes to Figure 2 and Figure 3 ................................................... 7 Updated Outline Dimensions ....................................................... 14 Changes to Ordering Guide .......................................................... 14 9/05Revision 0: Initial Version Rev. A Page 2 of 16