CMOS a 8-/16-Channel Analog Multiplexers ADG506A/ADG507A FUNCTIONAL BLOCK DIAGRAM FEATURES 44 V Supply Maximum Rating V to V Analog Signal Range SS DD Single/Dual Supply Specifications Wide Supply Ranges (10.8 V to 16.5 V) Extended Plastic Temperature Range (408C to +858C) Low Power Dissipation (28 mW max) Low Leakage (20 pA typ) Available in 28-Lead DIP, SOIC, PLCC, TSSOP and LCCC Packages Superior Alternative to: DG506A, Hl-506 DG507A, Hl-507 GENERAL DESCRIPTION ORDERING GUIDE The ADG506A and ADG507A are CMOS monolithic analog multiplexers with 16 channels and dual 8 channels, respectively. Temperature Package 1 2 The ADG506A switches one of 16 inputs to a common output, Model Range Option depending on the state of four binary addresses and an enable ADG506AKN 40 C to +85 C N-28 input. The ADG507A switches one of eight differential inputs to ADG506AKR 40 C to +85 C R-28 a common differential output, depending on the state of three ADG506AKP 40 C to +85 C P-28A binary addresses and an enable input. Both devices have TTL ADG506ABQ 40 C to +85 C Q-28 and 5 V CMOS logic compatible digital inputs. ADG506ATQ 55 C to +125 C Q-28 The ADG506A and ADG507A are designed on an enhanced ADG506ATE 55 C to +125 C E-28A 2 LC MOS process, which gives an increased signal capability of ADG507AKN 40 C to +85 C N-28 V to V and enables operation over a wide range of supply SS DD ADG507AKR 40 C to +85 C R-28 voltages. The devices can operate comfortably anywhere in the ADG507AKP 40 C to +85 C P-28A 10.8 V to 16.5 V single or dual supply range. These multiplexers ADG507AKRU 40 C to +85 C RU-28 also feature high switching speeds and low R . ON ADG507ABQ 40 C to +85 C Q-28 ADG507ATQ 55 C to +125 C Q-28 PRODUCT HIGHLIGHTS ADG507ATE 55 C to +125 C E-28A 1. Single/Dual Supply Specifications with a Wide Tolerance The devices are specified in the 10.8 V to 16.5 V range for NOTES 1 both single and dual supplies. To order MIL-STD-883, Class B processed parts, add /883B to part number. See Analog Devices Military/Aerospace Reference Manual (1994) for military 2. Extended Signal Range data sheet. 2 The enhanced LC MOS processing results in a high break- 2 E = Leadless Ceramic Chip Carrier (LCCC) N = Plastic DIP P = Plastic down and an increased analog signal range of V to V . Leaded Chip Carrier (PLCC) Q = Cerdip R = 0.3 Small Outline IC (SOIC) SS DD RU = Thin Shrink Small Outline Package (TSSOP). 3. Break-Before-Make Switching Switches are guaranteed break-before-make so input signals are protected against momentary shorting. 4. Low Leakage Leakage currents in the range of 20 pA make these multiplexers suitable for high precision circuits. REV. C Information furnished by Analog Devices is believed to be accurate and reliable. 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No license is granted by implication or Tel: 781/329-4700 World Wide Web Site: ADG506A/ADG507ASPECIFICATIONS Dual Supply (V = +10.8 V to +16.5 V, V = 10.8 V to 16.5 V unless otherwise noted) DD SS ADG506A ADG506A ADG506A ADG507A ADG507A ADG507A K Version B Version T Version 408C to 408C to 558C to Parameter +258C +858C +258C +858C +258C +1258C Units Comments ANALOG SWITCH Analog Signal Range V V V V V V V min SS SS SS SS SS SS V V V V V V V max DD DD DD DD DD DD R 280 280 280 W typ 10 V V +10 V, I = 1 mA Test Circuit 1 ON S DS 450 600 450 600 450 600 W max 300 400 300 400 W max V = 15 V ( 10%), V = 15 V ( 10%) DD SS 300 400 W max V = 15 V ( 5%), V = 15 V ( 5%) DD SS R Drift 0.6 0.6 0.6 %/ C typ 10 V V +10 V, I = 1 mA ON S DS R Match 5 5 5 % typ 10 V V +10 V, I = 1 mA ON S DS I (OFF), Off Input Leakage 0.02 0.02 0.02 nA typ V1 = 10 V, V2 = 710 V Test Circuit 2 S 1 50 1 50 1 50 nA max I (OFF), Off Output Leakage 0.04 0.04 0.04 nA typ V1 = 10 V, V2 = 710 V Test Circuit 3 D ADG506A 1 200 1 200 1 200 nA max ADG507A 1 100 1 100 1 100 nA max I (ON), On Channel Leakage 0.04 0.04 0.04 nA typ V1 = 10 V, V2 = 710 V Test Circuit 4 D ADG506A 1 200 1 200 1 200 nA max ADG507A 1 100 1 100 1 100 nA max I , Differential Off Output DIFF Leakage (ADG507A Only) 25 25 25 nA max V1 = 10 V, V2 = 710 V Test Circuit 5 DIGITAL CONTROL V , Input High Voltage 2.4 2.4 2.4 V min INH V , Input Low Voltage 0.8 0.8 0.8 V max INL I or I 111 m A max V = 0 to V INL INH IN DD C Digital Input Capacitance 8 8 8 pF max IN DYNAMIC CHARACTERISTICS 1 t 200 200 200 ns typ V1 = 10 V, V2 = +10 V Test Circuit 6 TRANSITION 300 400 300 400 300 400 ns max 1 t 50 50 50 ns typ Test Circuit 7 OPEN 25 10 25 10 25 10 ns min 1 t (EN) 200 200 200 ns typ Test Circuit 8 ON 300 400 300 400 300 400 ns max 1 t (EN) 200 200 200 ns typ Test Circuit 8 OFF 300 400 300 400 300 400 ns max OFF Isolation 68 68 68 dB typ V = 0.8 V, R = 1 kW , C = 15 pF, EN L L 50 50 50 dB min V = 7 V rms, f = 100 kHz S C (OFF) 5 5 5 pF typ V = 0.8 V S EN C (OFF) D ADG506A 44 44 44 pF typ V = 0.8 V EN ADG507A 22 22 22 pF typ Q , Charge Injection 4 4 4 pC typ R = 0 W , V = 0 V Test Circuit 9 INJ S S POWER SUPPLY I 0.6 0.6 0.6 mA typ V = V or V DD IN INL lNH 1.5 1.5 1.5 mA max I 20 20 20 m A typ V = V or V SS IN IN INH 0.2 0.2 0.2 mA max Power Dissipation 10 10 10 mW typ 28 28 28 mW max NOTES 1 Sample tested at +25 C to ensure compliance. Specifications subject to change without notice. REV. C 2