CMOS a Low Voltage 4 V, 4-Channel Multiplexer ADG704 FEATURES FUNCTIONAL BLOCK DIAGRAM +1.8 V to +5.5 V Single Supply 2.5 V (Typ) On Resistance ADG704 Low On-Resistance Flatness S1 3 dB Bandwidth >200 MHz Rail-to-Rail Operation S2 10-Lead mSOIC Package D Fast Switching Times S3 t 20 ns ON S4 t 13 ns OFF Typical Power Consumption (<0.01 mW) 1 OF 4 DECODER TTL/CMOS Compatible APPLICATIONS A0 A1 EN Battery Powered Systems Communication Systems Sample-and-Hold Systems Audio Signal Routing Data Acquisition System Video Switching GENERAL DESCRIPTION PRODUCT HIGHLIGHTS The ADG704 is a CMOS analog multiplexer, comprising four 1. +1.8 V to +5.5 V Single Supply Operation. single channels. This multiplexer is designed on an advanced The ADG704 offers high performance and is fully specified submicron process that provides low power dissipation yet gives and guaranteed with +3 V and +5 V supply rails. high switching speed, low on resistance, low leakage currents 2. Very Low R (4.5 W Max at 5 V, 8 W Max at 3 V). ON and high bandwidths. At supply voltage of +1.8 V, R is typically 35 W over the ON The on resistance profile is very flat over the full analog signal temperature range. range. This ensures excellent linearity and low distortion when 3. Low On-Resistance Flatness. switching audio signals. Fast switching speed also makes the 4. 3 dB Bandwidth Greater than 200 MHz. part suitable for video signal switching. 5. Low Power Dissipation. The ADG704 can operate from a single supply range of +1.8 V CMOS construction ensures low power dissipation. to +5.5 V, making it ideal for use in battery powered instru- ments and with the new generation of DACs and ADCs from 6. Fast t /t . ON OFF Analog Devices. 7. Break-Before-Make Switching Action. The ADG704 switches one of four inputs to a common output, 8. 10-Lead m SOIC Package. D, as determined by the 3-bit binary address lines, A0, A1 and EN. A Logic 0 on the EN pin disables the device. Each switch of the ADG704 conducts equally well in both directions when ON. The ADG704 exhibits break-before-make switching action. The ADG704 is available in 10-lead m SOIC package. REV. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or Tel: 781/329-4700 World Wide Web Site: (V = +5 V 6 10%, GND = 0 V. All Specifications 408C to +858C, unless DD 1 ADG704SPECIFICATIONS otherwise noted.) B Version 408C to Parameter +258C +858C Units Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 V to V V DD On-Resistance (R ) 2.5 W typ V = 0 V to V , I = 10 mA ON S DD DS 4 4.5 W max Test Circuit 1 On-Resistance Match Between Channels (D R ) 0.1 W typ V = 0 V to V , I = 10 mA ON S DD DS 0.4 W max On-Resistance Flatness (R )0.75 W typ V = 0 V to V , I = 10 mA FLAT(ON) S DD DS 1.2 W max LEAKAGE CURRENTS V = +5.5 V DD Source OFF Leakage I (OFF) 0.01 nA typ V = 4.5 V/1 V, V = 1 V/4.5 V S S D 0.1 0.3 nA max Test Circuit 2 Drain OFF Leakage I (OFF) 0.01 nA typ V = 4.5 V/1 V, V = 1 V/4.5 V D S D 0.1 0.3 nA max Test Circuit 2 Channel ON Leakage I , I (ON) 0.01 nA typ V = V = 4.5 V or 1 V D S S D 0.1 0.3 nA max Test Circuit 3 DIGITAL INPUTS Input High Voltage, V 2.4 V min INH Input Low Voltage, V 0.8 V max INL Input Current I or I 0.005 m A typ V = V or V INL INH IN INL INH 0.1 m A max 2 DYNAMIC CHARACTERISTICS t 14 ns typ R = 300 W , C = 35 pF ON L L 20 ns max V = 3 V, Test Circuit 4 S t 6 ns typ R = 300 W , C = 35 pF OFF L L 13 ns max V = 3 V, Test Circuit 4 S Break-Before-Make Time Delay, t 8 ns typ R = 300 W , C = 35 pF D L L 1 ns min V = V = 3 V, Test Circuit 5 S1 S2 Charge Injection 3 pC typ V = 2 V, R = 0 W , C = 1 nF S S L Test Circuit 6 Off Isolation 60 dB typ R = 50 W , C = 5 pF, f = 10 MHz L L 80 dB typ R = 50 W , C = 5 pF, f = 1 MHz L L Test Circuit 7 Channel-to-Channel Crosstalk 62 dB typ R = 50 W , C = 5 pF, f = 10 MHz L L 82 dB typ R = 50 W , C = 5 pF, f = 1 MHz L L Test Circuit 8 Bandwidth 3 dB 200 MHz typ R = 50 W , C = 5 pF Test Circuit 9 L L C (OFF) 9 pF typ S C (OFF) 37 pF typ D C , C (ON) 54 pF typ D S POWER REQUIREMENTS V = +5.5 V DD Digital Inputs = 0 V or 5 V I 0.001 m A typ DD 1.0 m A max NOTES 1 Temperature ranges are as follows: B Version: 40 C to +85 C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. 2 REV. A