CMOS, Low Voltage a RF/Video, SPST Switch ADG751 FEATURES FUNCTIONAL BLOCK DIAGRAM High Off Isolation 75 dB at 100 MHz 3 dB Signal Bandwidth 300 MHz +1.8 V to +5.5 V Single Supply ADG751 Low On-Resistance (15 V) S D Fast Switching Times t Typically 9 ns ON t Typically 3 ns OFF IN Typical Power Consumption <0.01 mW TTL/CMOS Compatible APPLICATIONS Audio and Video Switching SWITCH SHOWN FOR A LOGIC1 INPUT RF Switching Networking Applications Battery Powered Systems Communication Systems Relay Replacement Sample-and-Hold Systems PRODUCT HIGHLIGHTS GENERAL DESCRIPTION 1. High Off Isolation 75 dB at 100 MHz. The ADG751 is a low voltage SPST (single pole, single throw) switch. It is constructed in a T-switch configuration, which 2. 3 dB Signal Bandwidth 300 MHz. results in excellent Off Isolation while maintaining good fre- 3. Low On-Resistance (15 W ). quency response in the ON condition. 4. Low Power Consumption, typically <0.01 m W. High off isolation and wide signal bandwidth make this part suitable for switching RF and video signals. Low power con- 5. Tiny 6-lead SOT-23 and 8-lead m SOIC packages. sumption and operating supply range of +1.8 V to +5.5 V make it ideal for battery powered, portable instruments. The ADG751 is designed on a submicron process that provides low power dissipation yet gives high switching speed and low on resistance. This part is a fully bidirectional switch and can handle signals up to and including the supply rails. The ADG751 is available in 6-lead SOT-23 and 8-lead m SOIC packages. REV. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or Tel: 781/329-4700 World Wide Web Site: (V = +5 V 6 10%, GND = 0 V, unless otherwise noted.) ADG751SPECIFICATIONS DD B Grade A Grade 408C to 408C to Parameter +258C +858C +258C +858C Units Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 V to V 0 V to V V DD DD On-Resistance (R)28 15 W typ V = 0 V to V , I = 10 mA ON S DD DS 35 40 18 20 W max Test Circuit 1 On-Resistance Flatness (R )3 2 W typ V = 0 V to 2.5 V, I = 10 mA FLAT(ON) S DS 53 W max V = 4.5 V DD LEAKAGE CURRENTS V = +5.5 V DD Source OFF Leakage I (OFF) 0.01 0.01 nA typ V = 4.5 V/1 V, V = 1 V/4.5 V S D S 0.25 3.0 0.25 3.0 nA max Test Circuit 2 Drain OFF Leakage I (OFF) 0.01 0.01 nA typ V = 4.5 V/1 V, V = 1 V/4.5 V D D S 0.25 3.0 0.25 3.0 nA max Test Circuit 2 Channel ON Leakage I , I (ON) 0.01 0.01 nA typ V = V = 1 V, or 4.5 V D S D S 0.25 3.0 0.25 3.0 nA max Test Circuit 3 DIGITAL INPUTS Input High Voltage, V 2.4 2.4 V min INH Input Low Voltage, V 0.8 0.8 V max INL Input Current I or I 0.001 0.001 m A typ V = V or V INL INH IN INL INH 0.5 0.5 m A max C , Digital Input Capacitance 2 2 pF typ IN 1 DYNAMIC CHARACTERISTICS t 9 9 ns typ R = 300 W , C = 35 pF ON L L 13 13 ns max V = 3 V, Test Circuit 4 S t 3 3 ns typ R = 300 W , C = 35 pF OFF L L 5 5 ns max V = 3 V, Test Circuit 4 S Charge Injection 1 1 pC typ V = 1 V, R = 0 W , C = 1.0 nF S S L Test Circuit 5 Off Isolation 75 65 dB typ R = 50 W , C = 5 pF, f = 100 MHz L L Test Circuit 6 3 dB Bandwidth 180 300 MHz typ R = 50 W , C = 5 pF, Test Circuit 7 L L C (OFF) 4 4 pF typ S C (OFF) 4 4 pF typ D C , C (ON) 26 15 pF typ D S POWER REQUIREMENTS V = +5.5 V DD I 0.001 0.001 m A typ Digital Inputs = 0 V or +5.5 V DD 0.1 0.5 0.1 0.5 m A max NOTES 1 Guaranteed by design, not subject to production test. Specifications subject to change without notice. 2 REV. A