CMOS, Low Voltage a RF/Video, SPDT Switch ADG752 FEATURES FUNCTIONAL BLOCK DIAGRAM High Off Isolation 80 dB at 30 MHz 3 dB Signal Bandwidth 250 MHz ADG752 +1.8 V to +5.5 V Single Supply S1 Low On-Resistance (15 V Typically) D Low On-Resistance Flatness S2 Fast Switching Times IN t Typically 8 ns ON t Typically 3 ns OFF Typical Power Consumption < 0.01 mW SWITCH SHOWN FOR A LOGIC1 INPUT TTL/CMOS Compatible APPLICATIONS Audio and Video Switching RF Switching Networking Applications Battery Powered Systems Communication Systems Relay Replacement Sample-and-Hold Systems GENERAL DESCRIPTION PRODUCT HIGHLIGHTS The ADG752 is a low voltage SPDT (single pole, double throw) 1. High Off Isolation 80 dB at 30 MHz. switch. It is constructed using switches in a T-switch configura- 2. 3 dB Signal Bandwidth 250 MHz. tion, which results in excellent Off Isolation while maintaining 3. Low On Resistance (15 W ). good frequency response in the ON condition. 4. Low Power Consumption, typically <0.01 m W. High off isolation and wide signal bandwidth make this part suitable for switching RF and video signals. Low power con- 5. Break-Before-Make Switching Action. sumption and operating supply range of +1.8 V to +5.5 V make 6. Tiny 6-lead SOT-23 and 8-lead m SOIC packages. it ideal for battery powered, portable instruments. The ADG752 is designed on a submicron process that provides low power dissipation yet gives high switching speed and low on resistance. This part is a fully bidirectional switch and can handle signals up to and including the supply rails. Break-before-make switching action ensures the input signals are protected against momentary shorting when switching between channels. The ADG752 is available in 6-lead SOT-23 and 8-lead m SOIC packages. REV. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or Tel: 781/329-4700 World Wide Web Site: ADG752SPECIFICATIONS (V = +5 V 6 10%, GND = 0 V, unless otherwise noted.) DD B Version 408C Parameter +258C to +858C Units Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 V to V V DD On-Resistance (R)15 W typ V = 0 V to V , I = 10 mA ON S DD DS 18 20 W max Test Circuit 1 On-Resistance Match Between 0.1 W typ V = 0 V to V , I = 10 mA S DD DS Channels (DR ) 0.6 0.6 W max ON On-Resistance Flatness (R )2 W typ V = 0 V to 2.5 V, I = 10 mA FLAT(ON) S DS 3 W max V = + 4.5 V DD LEAKAGE CURRENTS (OFF) 0.01 nA typ V = 4.5 V/1 V, V = 1 V/4.5 V Source OFF Leakage I S D S 0.25 3.0 nA max Test Circuit 2 , I (ON) 0.01 nA typ V = V = 1 V, or 4.5 V Channel ON Leakage I D S D S 0.25 3.0 nA max Test Circuit 3 DIGITAL INPUTS Input High Voltage, V 2.4 V min INH Input Low Voltage, V 0.8 V max INL Input Current I or I 0.001 m A typ V = V or V INL INH IN INL INH 0.5 m A max C , Digital Input Capacitance 2 pF typ IN 1 DYNAMIC CHARACTERISTICS t 8 ns typ R = 300 W , C = 35 pF ON L L 13 ns max V = 3 V, Test Circuit 4 S t 3 ns typ R = 300 W , C = 35 pF OFF L L 5 ns max V = 3 V, Test Circuit 4 S Break-Before-Make Time Delay 6 ns typ R = 300 W , C = 35 pF L L 1 ns min V = 3 V, Test Circuit 5 S Off Isolation 80 dB typ R = 50 W , C = 5 pF, f = 30 MHz L L Test Circuit 6 Crosstalk 80 dB typ R = 50 W , C = 5 pF, f = 30 MHz L L Test Circuit 7 3 dB Bandwidth 250 MHz typ R = 50 W , C = 5 pF, Test Circuit 8 L L C (OFF) 4 pF typ S C , C (ON) 15 pF typ D S = +5.5 V POWER REQUIREMENTS V DD 0.001 m A typ Digital Inputs = 0 V or +5.5 V I DD 0.1 0.5 m A max NOTES 1 Guaranteed by design, not subject to production test. Specifications subject to change without notice. 2 REV. A