CMOS 3 V/5 V, a Wide Bandwidth Quad 2:1 Mux ADG774 FEATURES FUNCTIONAL BLOCK DIAGRAM Low Insertion Loss and On Resistance: 2.2 Typical On Resistance Flatness 0.5 Typical ADG774 Automotive Temperature Range S1A D1 40 C to +125 C S1B 3 dB Bandwidth = 240 MHz S2A D2 Single 3 V/5 V Supply Operation S2B Rail-to-Rail Operation S3A Very Low Distortion: 0.5% D3 S3B Low Quiescent Supply Current (1 nA Typical) S4A Fast Switching Times D4 S4B t 7 ns ON t 4 ns OFF 1 OF 2 TTL/CMOS Compatible DECODER APPLICATIONS EN IN USB 1.1 Signal Switching Circuits Cell Phones PDAs Battery-Powered Systems Communications Systems Data Acquisition Systems Token Ring 4 Mbps/16 Mbps Audio and Video Switching Relay Replacement GENERAL DESCRIPTION The ADG774 operates from a single 3.3 V/5 V supply and is The ADG774 is a monolithic CMOS device comprising four TTL logic compatible. The control logic for each switch is shown 2:1 multiplexer/demultiplexers with high impedance outputs. in the Truth Table. The CMOS process provides low power dissipation yet gives These switches conduct equally well in both directions when ON, high switching speed and low on resistance. The on resistance and have an input signal range that extends to the supplies. In variation is typically less than 0.5 with an input signal ranging the OFF condition, signal levels up to the supplies are blocked. from 0 V to 5 V. The ADG774 switches exhibit break-before-make switching The bandwidth of the ADG774 is greater than 200 MHz this, action. coupled with low distortion (typically 0.5%), makes the part suitable for switching USB 1.1 data signals and fast Ethernet PRODUCT HIGHLIGHTS signals. 1. Wide 3 dB Bandwidth, 240 MHz. The on resistance profile is very flat over the full analog input 2. Ultralow Power Dissipation. range ensuring excellent linearity and low distortion when 3. Extended Signal Range. switching audio signals. Fast switching speed, coupled with high The ADG774 is fabricated on a CMOS process giving an signal bandwidth, also makes the parts suitable for video signal increased signal range that fully extends to the supply rails. switching. CMOS construction ensures ultralow power dissipa- 4. Low Leakage Over Temperature. tion, making the parts ideally suited for portable and battery- powered instruments. 5. Break-Before-Make Switching. This prevents channel shorting when the switches are config- ured as a multiplexer. 6. Crosstalk Typically 70 dB 30 MHz. 7. Off Isolation Typically 60 dB 10 MHz. REV. C Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. may result from its use. No license is granted by implication or otherwise Tel: 781/329-4700 www.analog.com under any patent or patent rights of Analog Devices. Trademarks and Fax: 781/326-8703 2004 Analog Devices, Inc. All rights reserved. registered trademarks are the property of their respective owners.ADG774SPECIFICATIONS SINGLE SUPPLY (V = 5 V 10%, GND = 0 V. All specifications T to T unless otherwise noted.) DD MIN MAX 1 B Version 40 C to 40 C to Parameter +25 C +85 C +125 C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 V to V V DD On Resistance (R ) 2.2 typ V = 0 V to V , I = 10 mA ON D DD S 57 max On Resistance Match between Channels ( R)0.15 typ V = 0 V to V , I = 10 mA ON D DD S 0.5 0.5 max On Resistance Flatness (R ) 0.5 typ V = 0 V to V , I = 1 mA FLAT(ON) D DD S 11 max LEAKAGE CURRENTS Source OFF Leakage I (OFF) 0.01 nA typ V = 4.5 V, V = 1 V V = 1 V, V = 4.5 V S D S D S 0.5 1 1.5 nA max Test Circuit 2 Drain OFF Leakage I (OFF) 0.01 nA typ V = 4.5 V, V = 1 V V = 1 V, V = 4.5 V D D S D S 0.5 1 1.5 nA max Test Circuit 2 Channel ON Leakage I , I (ON) 0.01 nA typ V = V = 4.5 V V = V = 1 V Test Circuit 3 D S D S D S 0.5 1 1.5 nA max DIGITAL INPUTS Input High Voltage, V 2.0 V min INH Input Low Voltage, V 0.8 V max INL Input Current I or I 0.001 A typ V = V or V INL INH IN INL INH 0.5 A max 2 DYNAMIC CHARACTERISTICS t 7 ns typ R = 100 , C = 35 pF, ON L L 15 20 ns max V = +3 V Test Circuit 4 S t 4 ns typ R = 100 , C = 35 pF, OFF L L 89 ns max V = +3 V Test Circuit 4 S Break-Before-Make Time Delay, t 5 ns typ R = 100 , C = 35 pF, D L L 1 ns min V = V = +5 V Test Circuit 5 S1 S2 Off Isolation 65 dB typ R = 100 , f = 10 MHz Test Circuit 7 L Channel-to-Channel Crosstalk 75 dB typ R = 100 , f = 10 MHz Test Circuit 8 L Bandwidth 3 dB 240 MHz typ R = 100 Test Circuit 6 L Distortion 0.5 % typ R = 100 L Charge Injection 10 pC typ C = 1 nF Test Circuit 9 L C (OFF) 10 pF typ f = 1 kHz S C (OFF) 20 pF typ f = 1 kHz D C , C (ON) 30 pF typ f = 1 MHz D S POWER REQUIREMENTS V = +5.5 V DD Digital Inputs = 0 V or V DD I 11 A max DD 0.001 A typ 11 A typ V = +5 V I IN IN I 100 mA max V /V = 0 V O S D NOTES 1 Temperature range: B Version, 40C to +125C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice. REV. C 2