High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz Data Sheet HMC349AMS8G FEATURES FUNCTIONAL BLOCK DIAGRAM RF 2 Nonreflective, 50 design High isolation: 57 dB to 2 GHz HM C3 49 AM S8 G VDD Low insertion loss: 0.9 dB to 2 GHz 50 High input linearity EN RF C 1 dB power compression (P1dB): 34 dBm typical CT RL Third-order intercept (IP3): 52 dBm typical 50 High power handling GND 33.5 dBm through path 26.5 dBm terminated path RF 1 Single positive supply: 3 V to 5 V Figure 1. CMOS-/TTL-compatible control All off state control 8-lead mini small outline package with exposed pad (MINI SO EP) APPLICATIONS Cellular/4G infrastructure Wireless infrastructure Mobile radios Test equipment GENERAL DESCRIPTION The HMC349AMS8G is a gallium arsenide (GaAs), pseudo- The HMC349AMS8G operates with a single positive supply morphic high electron mobility transistor (PHEMT), single-pole, voltage from 3 V to 5 V and provides a CMOS-/TTL-compatible double throw (SPDT) switch specified from 100 MHz to 4 GHz. control interface. The HMC349AMS8G is well suited for cellular infrastructure The HMC349AMS8G comes in an 8-lead mini small outline applications by yielding high isolation of 57 dB, low insertion package with an exposed pad. loss of 0.9 dB, high input IP3 of 52 dBm, and high input P1dB of 34 dBm. Rev. F Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No Tel: 781.329.4700 2019 Analog Devices, Inc. All rights reserved. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Technical Support www.analog.com Trademarks and registered trademarks are the property of their respective owners. DRI VER 15025-001HMC349AMS8G Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Typical Performance Characteristics ..............................................6 Applications ....................................................................................... 1 Insertion Loss, Return Loss, and Isolation ................................6 Functional Block Diagram .............................................................. 1 Input Power Compression and Third-Order Intercept (IP3) .......7 General Description ......................................................................... 1 Theory of Operation .........................................................................8 Revision History ............................................................................... 2 Applications Information .................................................................9 Specif icat ions ..................................................................................... 3 Evaluation Board ...........................................................................9 Absolute Maximum Ratings ............................................................ 4 Outline Dimensions ....................................................................... 10 ESD Caution .................................................................................. 4 Ordering Guide .......................................................................... 10 Pin Configuration and Function Descriptions ............................. 5 Interface Schematics..................................................................... 5 REVISION HISTORY 10/2019Rev. E to Rev. F 12/2016Rev. B to Rev. C Changes to Table 1 ............................................................................ 3 Change to Frequency Range Parameter, Table 1 ........................... 3 Updated Outline Dimensions ....................................................... 10 Changes to Ordering Guide .......................................................... 10 This Hittite Microwave Products data sheet has been reformatted to meet the styles and standards of Analog Devices, Inc. 8/2019Rev. D to Rev. E 10/2016v01.0214 to Rev. B Updated Outline Dimensions ....................................................... 10 Changes to Features Section ............................................................ 1 Changes to Table 2 ............................................................................. 4 Changes to Ordering Guide .......................................................... 10 Changes to Theory of Operation Section....................................... 8 8/2018Rev. C to Rev. D Updated Outline Dimensions ....................................................... 10 Changed Reflow (MSL1 Rating) to Reflow, Table 2 .................... 4 Changes to Ordering Guide .......................................................... 10 Deleted Note 2, Table 2 Renumbered Sequentially ..................... 4 Changes to Ordering Guide .......................................................... 10 Rev. F Page 2 of 10