GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 40 GHz Data Sheet HMC930A FEATURES FUNCTIONAL BLOCK DIAGRAM 3 4 High output power for 1 dB compression (P1dB): 22 dBm HMC930A High saturated output power (P ): 24 dBm SAT High gain: 13 dB 5 High output third-order intercept (IP3): 33.5 dBm RFOUT/V DD Supply voltage: 10 V at 175 mA V 2 GG 2 50 matched input/output Die size: 2.82 mm 1.50 mm 0.1 mm 1 RFIN APPLICATIONS V 1 GG 8 7 6 Test instrumentation Microwave radios and VSATs Figure 1. Military and space Telecommunications infrastructure Fiber optics GENERAL DESCRIPTION The HMC930A is a gallium arsenide (GaAs), pseudomorphic, 8 GHz to 32 GHz, making it ideal for electronic warfare (EW), high electron mobility transfer (pHEMT), monolithic microwave electronic countermeasures (ECM), radar, and test equipment integrated circuit (MMIC), distributed power amplifier that applications. The HMC930A amplifier inputs/outputs (I/Os) are operates from dc to 40 GHz. The HMC930A provides 13 dB of internally matched to 50 , facilitating integration into multichip gain, 33.5 dBm output IP3, and 22 dBm of output power at modules (MCMs). All data is taken with the chip connected via 1 dB gain compression, requiring 175 mA from a 10 V supply. two 0.025 mm (1 mil) wire bonds of minimal length at 0.31 mm The HMC930A exhibits a slightly positive gain slope from (12 mils). Rev. A Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. Tel: 781.329.4700 20152020 Analog Devices, Inc. All rights reserved. No license is granted by implication or otherwise under any patent or patent rights of Analog Technical Support www.analog.com Devices. Trademarks and registered trademarks are the property of their respective owners. ACG1 ACG2 ACG4 ACG3 13738-001HMC930A Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Pin Configuration and Function Descriptions .............................6 Applications ...................................................................................... 1 Interface Schematics .....................................................................7 Functional Block Diagram .............................................................. 1 Typical Performance Characteristics .............................................8 General Description ......................................................................... 1 Theory of Operation ...................................................................... 13 Revision History ............................................................................... 2 Applications Information ............................................................. 14 Electrical Specifications ................................................................... 3 Biasing Procedures ..................................................................... 14 DC to 12 GHz Frequency Range ................................................ 3 Mounting and Bonding Techniques for Millimeterwave GaAs MMICs .............................................................................. 15 12 GHz to 32 GHz Frequency Range ........................................ 3 Outline Dimensions ....................................................................... 16 32 GHz to 40 GHz Frequency Range ........................................ 4 Die Packaging Information ...................................................... 16 Total Supply Current by VDD ...................................................... 4 Ordering Guide .............................................................................. 16 Absolute Maximum Ratings ........................................................... 5 ESD Caution.................................................................................. 5 REVISION HISTORY 3/2020Rev. 0 to Rev. A 12/2015Revision 0: Initial Version Changes to Channel Temperature Parameter and Continuous Power Dissipation, P (T = 85C, Derate 32.1 mW/C Above DISS A 85C) Parameter, Table 5 ................................................................ 5 Rev. A Page 2 of 16