MAX17119 19-4952 Rev 0 12/09 10-Channel Scan Driver for TFT LCD with GPM Function General Description Features The MAX17119 includes a 10-channel, high-voltage, S High-Voltage Level-Shifting Scan Drivers level-shifting scan driver with a gate-pulse modulation Logic-Level Inputs (GPM) feature to shape the corner of the scan-driver out- +38V to -12V Outputs put to reduce flicker. The device is optimized for thin-film GPM Feature transistor (TFT) liquid-crystal display (LCD) applications. Discharge Channel The high-voltage level-shifting scan driver is designed to S Thermal-Overload Protection drive the TFT panel gate logic. Its 10 outputs swing from S 28-Pin, 5mm x 5mm Thin QFN Package +38V (maximum) to -12V (minimum) and can swiftly drive capacitive loads. There are two positive supply inputs that provide flexibility for system design. Ordering Information The GPM feature is employed to shape the corner of the falling edge of the clock channels. This reduces flicker, PART TEMP RANGE PIN-PACKAGE and therefore improves the display quality. MAX17119ETI+ -40NC to +85NC 28 TQFN The MAX17119 also features a dedicated discharge +Denotes lead(Pb)-free/RoHS-compliant package. channel and an integrated voltage detector. When the system shuts down, the voltage detector commands the discharge channel to swing its output to positive sup- ply voltage so as to remove any residual image on the display quickly. The MAX17119 is available in a 28-pin, 5mm x 5mm, thin QFN package with a maximum thickness of 0.8mm for thin LCD panels. Applications LCD Monitors LCD TVs Maxim Integrated Products 1 For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxims website at www.maxim-ic.com. EVALUATION KIT AVAILABLE10-Channel Scan Driver for TFT LCD with GPM Function ABSOLUTE MAXIMUM RATINGS A1A9, VSENSE, FLK1, FLK2, FLK3 to GND ..........-0.3V to +6V GON2 RMS Current ..........................................................380mA GON1, GON2 to GND ...........................................-0.3V to +40V GOFF RMS Current ..........................................................600mA GOFF to GND ........................................................-14V to +0.3V Continuous Power Dissipation (T = +70NC) A Y1Y7, YDCHG to GND ........(V - 0.3V) to (V + 0.3V) 28-Pin, 5mm x 5mm TQFN GOFF GON1 Y8, Y9 to GND .......................(V - 0.3V) to (V + 0.3V) (derate 34.5mW/NC above +70NC)..........................2758.6mW GOFF GON2 RE to GND ............................................ -0.3V to (V + 0.3V) Operating Temperature Range .......................... -40NC to +85NC GON1 Y1Y6 to RE ...........................(V - 0.3V) to (V + 0.3V) Junction Temperature .....................................................+150NC GOFF GON1 Y1Y6, YDCHG Load RMS Current .................................350mA Storage Temperature Range ............................ -65NC to +150NC GON1 RMS Current ........................................................600mA Lead Temperature (soldering, 10s) ................................+300NC Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (Circuit of Figure 1, V = 30V, V = -6.2V, T = 0C to +85C. Typical values are at T = +25C, unless otherwise noted.) GON GOFF A A PARAMETER CONDITIONS MIN TYP MAX UNITS HIGH-VOLTAGE DRIVER BLOCK GON Input-Voltage Range 12 38 V GOFF Input-Voltage Range -12 -2 V GOFF Supply Current A1A9 = 3.3V, VSENSE = GND, no load 100 200 FA GON Total Supply Current A1A9 = 3.3V, VSENSE = GND, no load 450 750 FA Output Voltage Low GOFF + GOFF + I 10mA V OUT = (Y1Y9, YDCHG) 0.08 0.16 Output Voltage High GON1 - GON1 - I 10mA V OUT = (Y1Y7, YDCHG) 0.16 0.08 GON2 - GON2 - Output Voltage High (Y8, Y9) I = 10mA V OUT 0.16 0.08 T = +25NC , V = 30V and V = -6.2V A GON1 GOFF Rise Time (Y1Y7, YDCHG) 50 200 ns (Note 1) T = +25NC , V = 30 V and V = -6.2V A GON1 GOFF Fall Time (Y1Y7, YDCHG) 40 120 ns (Note 1) T = +25NC , V = 30V and V = -6.2V A GON2 GOFF Rise Time (Y8, Y9) 50 200 ns (Note 1) T = +25NC , V = 30V and V = -6.2V A GON2 GOFF Fall Time (Y8, Y9) 40 120 ns (Note 1) Propagation Delay A Rising to Y Rising, VSENSE Falling to With V = 30V and V = -6.2V (Note 1) 50 ns GON GOFF YDCHG Rising Propagation Delay A Falling to Y Falling, VSENSE Rising to With V = 30V and V = -6.2V (Note 1) 50 ns GON GOFF YDCHG Falling 2 MAX17119