MAX4888B/MAX4888C 19-5706 Rev 0 12/10 Up to 8.0Gbps Dual Passive Switches General Description Features The MAX4888B/MAX4888C dual double-pole/double- S Single +3.3V Power-Supply Voltage throw (2 x DPDT), high-speed passive switches are S Supports PCIe Gen I, Gen II, and Gen III Data M ideal for switching two half-lanes of PCI Express (PCIe) Rates data between two possible destinations. These devices S Supports Up To and Including 6.0Gbps SAS/SATA feature a dual digital control input to switch signal paths. Signals The MAX4888C is intended for use in systems where S Supports Other High-Speed Interfaces (e.g., XAUI) both the input and output are capacitively coupled (e.g., SAS, SATA, XAUI, and PCIe) and provides a 10FA (typ) S Superior Bandwidth Return Loss source current and a 60kI (typ) internal biasing resistor S Small, 3.5mm x 5.5mm, 28-Pin TQFN Package to GND at the AOUT and BOUT pins. The devices are fully specified to operate from a single Ordering Information +3.3V (typ) power supply. Both devices are available in an industry-standard 3.5mm x 5.5mm, 28-pin TQFN PART TEMP RANGE PIN-PACKAGE package. They operate over the -40NC to +85NC extend- MAX4888BETI+ -40NC to +85NC 28 TQFN-EP* ed temperature range. MAX4888CETI+ -40NC to +85NC 28 TQFN-EP* +Denotes a lead(Pb)-free/RoHS-compliant package. Applications *EP = Exposed pad. Desktop PCs Notebook PCs Servers Typical Operating Circuit CONNECTION SELECT V V CC CC AOUTA+ SEL SEL AOUTA+ AOUTA- AOUTA- PCIe HOST PCIe DEVICE BOUTA+ SELB SELB BOUTA+ BOUTA- BOUTA- AIN+ AIN+ AIN- AIN- MAX4888C MAX4888C BIN+ BIN+ AOUTB+ BIN- BIN- AOUTB+ AOUTB- AOUTB- SAS HOST SAS DEVICE BOUTB+ BOUTB+ BOUTB- BOUTB- GND GND NOTE: CAPACITIVE COUPLING WAS OMITTED TO SIMPLIFY ILLUSTRATION. PCI Express is a registered trademark of PCI-SIG Corp. Maxim Integrated Products 1 For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxims website at www.maxim-ic.com. EVALUATION KIT AVAILABLEUp to 8.0Gbps Dual Passive Switches ABSOLUTE MAXIMUM RATINGS (All voltages referenced to GND, unless otherwise noted.) Continuous Current (SEL, SELB) ....................................Q10mA V ..........................................................................-0.3V to +4V Peak Current (SEL, SELB) CC SEL, SELB, AIN+, AIN-, BIN+, BIN-, AOUTA+, (pulsed at 1ms, 10% duty cycle) ................................Q10mA AOUTA-, AOUTB+, AOUTB-, BOUTA+, Continuous Power Dissipation (T = +70NC) A BOUTA-, BOUTB+, BOUTB- (Note 1) .. -0.3V to (V + 0.3V) TQFN (derate 28.6mW/NC above +70NC)..................2286mW CC Continuous Current (AIN to AOUTA /AOUTB , Operating Temperature Range .......................... -40NC to +85NC BIN to BOUTA /BOUTB ) ..........................................Q15mA Junction Temperature .....................................................+150NC Peak Current (AIN to AOUTA /AOUTB , Storage Temperature Range ............................ -65NC to +150NC BIN to BOUTA /BOUTB ) Lead Temperature (soldering, 10s) ................................+300NC (pulsed at 1ms, 10% duty cycle) ................................Q70mA Soldering Temperature (reflow) ......................................+260NC Note 1: Signals on SEL, SELB, AIN , BIN , AOUTA , AOUTB , BOUTA , and BOUTB exceeding V or GND are clamped by CC internal diodes. Limit forward-diode current to maximum current rating. PACKAGE THERMAL CHARACTERISTICS (Note 2) TQFN Junction-to-Ambient Thermal Resistance (q ) ..........35C/W JA Junction-to-Case Thermal Resistance (q ) .................2C/W JC Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four- layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (V = 3.3V Q10%, T = -40NC to +85NC unless otherwise noted. Typical values are at V = 3.3V, T = +25NC, unless otherwise CC A , CC A noted.) (Note 3) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS DC PERFORMANCE AIN , BIN , AOUTA , BOUTA , AOUTB , V - CC Analog-Signal Range V -0.3 V INPUT BOUTB 1.8 V = +3.0V, I = I = 15mA, CC AIN BIN On-Resistance R 6.4 8.4 I ON V = V = 0V, 1.2V OUTA OUTB On-Resistance Match V = +3.0V, I = I = 15mA, CC AIN BIN 0.2 1.5 DR I ON Between Channels V = V = 0V (Note 4) OUTA OUTB V = +3.0V, I = I = 15mA, CC AIN BIN On-Resistance Flatness R 0.3 1 I FLAT(ON) V = V = 0V, 1.2V (Note 5) OUTA OUTB V = +3.6V, V = V = 0V, 1.2V CC AIN BIN OUTA or OUTB I OUTA (OFF), V or V = 1.2V, 0V -1 +1 FA OUTA OUTB Off-Leakage Current I OUTB (OFF) (MAX4888B) V = +3.6V , V = V = 0V, 1.2V CC AIN BIN I AIN (ON), AIN , BIN On-Leakage Current V or V = V = V or -1 +1 FA OUTA OUTB AIN BIN I BIN (ON) unconnected (MAX4888B) All other ports are unconnected Output Short-Circuit Current 5 15 FA (MAX4888C) All other ports are unconnected Output Open-Circuit Voltage 0.2 0.6 0.9 V (MAX4888C) 2 MAX4888B/MAX4888C