V 1200 V
DS
I 450 A
CAB450M12XM3
DS
1200V, 450A All-Silicon Carbide
5 4 3 2 1
Conduction Optimized, Half-Bridge Module
Technical Features
Package 80 x 53 x 19 mm
D D
High Power Density Footprint
V+
High Junction Temperature (175 C) Operation
Low Inductance (6.7 nH) Design
V+
Implements Conduction Optimized Third
Generation SiC MOSFET Technology
G1
Silicon Nitride Insulator and Copper Baseplate
K1
C C
Mid
Applications
NTC2
G2
Motor & Traction Drives NTC
K2
Vehicle Fast Chargers
NTC1
Uninterruptable Power Supplies
V-
Smart-Grid / Grid-Tied Distributed Generation
B B
System Benefits
Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple,
low inductance design.
Isolated integrated temperature sensing enables high-level temperature protection.
Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrent prTTTitititleleleotection.
A A
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Key Parameters (T = 25C unless otherwise specified) DDDatatate:e:e: TTThurhurhursssdaydayday,,, AAAprprpriiilll 11,11,11, 201920192019 SSSheetheetheet 111111ofofof
C
5 4 3 2 1
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V Drain-Source Voltage 1200
DS max
V Gate-Source Voltage, Maximum Value -4 +19 AC frequency 1Hz. Note 1
GS max
V
Gate-Source Voltage, Recommended
V -4 +15 Static
GS op
Op. Value
450 V = 15 V, T = 25 C, T 175 C Fig. 20
GS C VJ
I DC Continuous Drain Current
DS
Note 2
409 V = 15 V, T = 90 C, T 175 C
GS C VJ
I DC Source-Drain Current 450 V = 15 V, T = 25 C, T 175 C
SD GS C VJ
A
I DC Source-Drain Current (Body Diode) 225 V = - 4 V, T = 25 C, T 175 C
SD BD GS C VJ
I Maximum Pulsed Drain-Source Current 900
DS (pulsed)
t limited by T
jmax
Pmax
V = 15 V, T = 25 C
I Maximum Pulsed Source-Drain Current 900 GS C
SD (pulsed)
Maximum Virtual Junction
T Temperature under Switching -40 175 C
VJ op
Conditions
Note 1 If MOSFET body diode is not used, V = -8/+19 V
GS max
Note 2 Assumes R = 0.11C/W and R = 4.6 m. Calculate P = (T T ) / R . Calculate I = (P / R )
TH JC DS(on) D VJ C TH JC D_MAX D DS(on)
Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703
Copyright 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, Wolfspeed, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
1MOSFET Characteristics (Per Position) (T = 25C unless otherwise specified)
C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V Drain-Source Breakdown Voltage 1200 V = 0 V, I = 200 A
(BR)DSS GS D
1.8 2.5 3.6 V = V , I = 132 mA
V DS GS D
V Gate Threshold Voltage
GS(th)
2.0 V = V , I = 132 mA, T = 175 C
DS GS D J
I Zero Gate Voltage Drain Current 5 200 V = 0 V, V = 1200 V
DSS GS DS
A
I Gate-Source Leakage Current 0.05 1.3 V = 15 V, V = 0 V
GSS GS DS
2.6 3.7 V = 15 V, I = 450 A
GS D
Drain-Source On-State Resistance (Devices Fig. 2
R m
DS(on)
Only) Fig. 3
4.6 V = 15 V, I = 450 A, T = 175 C
GS D J
355 V = 20 V, I = 450 A
DS DS
g Transconductance S Fig. 4
fs
360 V = 20 V, I = 450 A, T = 175 C
DS DS J
Turn-On Switching Energy, T = 25 C 11.0
J
V = 600 V,
E T = 125 C 11.7 DS
On J
I = 450A,
T = 175 C 13.0
J
D
Fig. 11
mJ V = -4 V/15 V,
GS
Fig. 13
Turn-Off Switching Energy, T = 25 C 10.1
J
R = 0.0 ,
G(ext)
E T = 125 C 11.3
Off J
L= 13.6 H
T = 175 C 12.1
J
R Internal Gate Resistance 2.5
G(int)
C Input Capacitance 38.0
iss
V = 0 V, V = 800 V,
GS DS
nF
C Output Capacitance 1.5 Fig. 9
oss
V = 25 mV, f = 100 kHz
AC
C Reverse Transfer Capacitance 90 pF
rss
Q Gate to Source Charge 355
GS
V = 800 V, V = -4 V/15 V
DS GS
Q Gate to Drain Charge 500 nC I = 450 A
D
GD
Per IEC60747-8-4 pg 21
Q Total Gate Charge 1330
G
R FET Thermal Resistance, Junction to Case 0.11 0.13 C/W Fig. 17
th JC
Body Diode Characteristics (Per Position) (T = 25C unless otherwise specified)
C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
4.7 V = -4 V, I = 450 A
GS SD
V Body Diode Forward Voltage V Fig. 7
SD
4.2 V = -4 V, I = 450 A, T = 175 C
GS SD J
t Reverse Recovery Time 52 ns
rr
V = -4 V, I = 450 A, V = 600 V
GS SD R
Q Reverse Recovery Charge 6.6 C
rr
di/dt = 8 A/ns, T = 175 C
J
I Peak Reverse Recovery Current 195 A
rr
Reverse Recovery Energy T = 25 C 0.2 V = 600 V, I = 450A,
J DS
D
E T = 125 C 1.1 mJ V = -4 V/15 V, R = 0.0 , Fig. 14
J GS
rr G(ext)
T = 175 C 1.9 L= 13.6 H
J
Rev. A, 2019-06-01 CAB450M12XM3 4600 Silicon Dr., Durham, NC 27703
Copyright 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, Wolfspeed, and the Wolfspeed logo
are registered trademarks of Cree, Inc.
2