X-On Electronics has gained recognition as a prominent supplier of CDDFN10-2574N ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. CDDFN10-2574N ESD Suppressors / TVS Diodes are a product manufactured by Bourns. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

CDDFN10-2574N Bourns

CDDFN10-2574N electronic component of Bourns
Images are for reference only
See Product Specifications
Part No.CDDFN10-2574N
Manufacturer: Bourns
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes 2.5Volts 4data lines
Datasheet: CDDFN10-2574N Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.5044 ea
Line Total: USD 1513.2

Availability - 7808
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
7808
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.5044
6000 : USD 0.4692
12000 : USD 0.4581
24000 : USD 0.4559

4306
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 165
Multiples : 1
165 : USD 0.7656
250 : USD 0.7579
500 : USD 0.6582
1000 : USD 0.5442
3000 : USD 0.4847

6554
Ship by Thu. 08 Aug to Mon. 12 Aug
MOQ : 1
Multiples : 1
1 : USD 1.1369
10 : USD 0.9129
100 : USD 0.7245
500 : USD 0.6141
1000 : USD 0.5005
3000 : USD 0.4782

4306
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 165
Multiples : 1
165 : USD 0.7656

8730
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 14
Multiples : 1
14 : USD 0.9366

5820
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 3000
Multiples : 3000
3000 : USD 0.661
6000 : USD 0.6149
12000 : USD 0.6004
24000 : USD 0.5974

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Moisture Sensitive
Numofpackaging
Pd - Power Dissipation
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CDDFN10-2574N from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CDDFN10-2574N and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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Features Applications n IEC 61000-4-2 (ESD) 30 kV (Air/Contact) n WAN/LAN devices IEC 61000-4-5 (Lightning) 45 A (8/20 s) n 10/100/1000 Ethernet n ESD protection to IEC 61000-4-2 (Level 4) n RoHS compliant* CDDFN10-2574N - Surface Mount TVS Diode Array General Information Pin 1 Pin 4 The Model CDDFN10-2574N device provides Electrostatic Line 1 In Line 3 In Discharge (ESD), Electrical Fast Transients (EFT), Lightning, and Cable Discharge Event (CDE) protection for high-speed data ports, meeting IEC 61000-4-2 (ESD) requirements. The Transient Voltage Suppressor array, protecting up to four data lines, offers a Working Peak Reverse Voltage of 2.5 V and Pin 10 Pin 7 a Minimum Breakdown Voltage of 3 V. Line 1 Out Line 3 Out Pin 2 Pin 6 Line 2 In Line 4 In The DFN10 packaged device has a low typical capacitance of only 1.7 pF between I/O lines. This allows it to be used for protecting sensitive components used on high-speed interfaces. The small footprint of the device allows for flow-through routing on the PCB, helping to maintain matched impedances of the Pin 9 Pin 6 high-speed data lines. Line 2 Out Line 4 Out Absolute Maximum Ratings ( T = 25 C Unless Otherwise Noted) A Parameter Symbol CDDFN10-2574N Unit Peak Pulse Current (t = 8/20 S) I 45 A p pp Operating Temperature T -55 to +85 C OP Storage Temperature T -55 to +150 C STG Electrical Characteristics ( T = 25 C Unless Otherwise Noted) A Parameter Symbol Min. Typ. Max. Unit Working Peak Reverse Voltage V 2.5 V WM Breakdown Voltage 1 mA V 3 7 V BR Leakage Current V I 1 A WM R Capacitance 1.25 V, f = 1 MHz C 1.7 2.5 pF IN (Between I/O Pins) Clamping Voltage 8/20 s I V 11 V PP C ESD Protection per IEC 6-1000-4-2 Contact Discharge 30 kV Air Discharge 30 *RoHS Directive 2015/863, Mar 31, 2015 and Annex. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. *RoHS COMPLIANT VERSIONS AVAILABLE *RoHS COMPLIANT LEAD FREE LEAD FREE VERSIONS ARE RoHS COMPLIANT*18 V pulse 16 Pulse from a transmission line 14 TLP I + 100 ns 12 TLP V DUT - 10 8 6 Between I/O Pins 4 2 0 0 1 2 3 4 5 6 7 89 Transmission Line Pulsing (TLP) Voltage (V) 18 2.5 V pulse 16 Pulse from a transmission line 2.0 14 TLP I + 100 ns 12 TLP V DUT 1.5 - 10 Between I/O Pins 8 1.0 6 Between I/O Pins 4 0.5 f = 1 MHz, 2 T = 25 C 0.0 CDDFN10-2574N3312- 2 mmSMD - TrimmingSurface Mount Potentiometer TVS Diode Array 0 0.0 0.5 1.0 1.5 2.0 2.5 0 1 2 3 4 5 6 7 89 Input Voltage (V) Transmission Line Pulsing (TLP) Voltage (V) Rating & Characteristic Curves Typical Voltage vs. Capacitance C Typical Clamping Voltage vs. Peak Pulse Current IN 2.5 13 12 11 2.0 10 Between I/O Pins 9 1.5 8 Line-to-Line, Between I/O Pins 7 Two I/O Pins Connected 6 1.0 Together on Each Line 5 4 Waveform 0.5 3 f = 1 MHz, Parameters: 2 tr = 8 s T = 25 C 1 td = 20 s 0.0 0 0.0 0.5 1.0 1.5 2.0 2.5 0 5 10 15 20 25 30 35 40 45 50 55 Input Voltage (V) Peak Pulse Current (A) Typical Transmission Line Pulsing (TLP) 18 13 V pulse 12 16 Pulse from a transmission line 11 14 TLP I 10 + Between I/O Pins100 ns 12 9 TLP V DUT 8 - 10 Line-to-Line, 7 Two I/O Pins Connected 8 6 Together on Each Line 5 6 Between I/O Pins 4 Waveform 4 3 Parameters: 2 2 tr = 8 s 1 td = 20 s 0 0 0 1 2 3 4 5 6 7 89 0 5 10 15 20 25 30 35 40 45 50 55 Transmission Line Pulsing (TLP) Voltage (V) Peak Pulse Current (A) 2.5 2.0 1.5 Between I/O Pins 1.0 0.5 f = 1 MHz, T = 25 C 0.0 0.0 0.5 1.0 1.5 2.0 2.5 Input Voltage (V) Specifications are subject to change without notice. 13 The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. 12 Users should verify actual device performance in their specific applications. 11 10 Between I/O Pins 9 8 Line-to-Line, 7 Two I/O Pins Connected 6 Together on Each Line 5 4 Waveform 3 Parameters: 2 tr = 8 s 1 td = 20 s 0 0 5 10 15 20 25 30 35 40 45 50 55 Peak Pulse Current (A) Clamping Voltage (V) Input Capacitance (pF) Clamping Voltage (V) Input Capacitance (pF) Transmission Line Pulsing (TLP) Current (A) Transmission Line Pulsing (TLP) Current (A) Clamping Voltage (V) Input Capacitance (pF) Transmission Line Pulsing (TLP) Current (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Bourns Inc.
BOURNS JW MILLER
BR4
J.W. Miller
JW Miller

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