ESD11N5.0ST5G ESD Protection Diodes MicroPackaged Diodes for ESD Protection The ESD11N is designed to protect voltage sensitive components that require ultralow capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, www.onsemi.com and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, it is suited for use in high frequency designs such as USB 2.0 high speed and antenna line applications. Specification Features Low Capacitance 0.6 pF MARKING Low Clamping Voltage DIAGRAM Small Body Outline Dimensions: 0.60 mm x 0.30 mm PIN 1 Low Body Height: 0.3 mm DSN2 XXXX Standoff Voltage: 5.0 V CASE 152AA YYY Low Leakage Response Time is < 1 ns XXXX = Specific Device Code YYY = Year Code IEC6100042 Level 4 ESD Protection These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant ORDERING INFORMATION Mechanical Characteristics Device Package Shipping MOUNTING POSITION: Any ESD11N5.0ST5G DSN2 5000/Tape & Reel QUALIFIED MAX REFLOW TEMPERATURE: 260C (PbFree) Device Meets MSL 1 Requirements For information on tape and reel specifications, including part orientation and tape sizes, please MAXIMUM RATINGS refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Rating Symbol Value Unit IEC 6100042 (ESD) Contact 8.0 kV Air 15 Total Power Dissipation on FR5 Board P 250 mW D (Note 1) T = 25C A Thermal Resistance, JunctiontoAmbient R 400 C/W JA Junction and Storage Temperature Range T , T 40 to +125 C J stg Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2010 1 Publication Order Number: November, 2017 Rev. 5 ESD11N5.0S/DESD11N5.0ST5G ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A V I ( A) V (V) I V (V) RWM BR T C R (V) V (Note 2) I C (pF) I = 1 A V RWM PP T C Device Max Per IEC6100042 (Note 3) (Note 4) Marking Max Max Min mA Typ Max Device ESD11N5.0ST5G N5S0 5.0 1.0 5.8 1.0 0.6 0.9 12 Figures 1 and 2 See Below 2. V is measured with a pulse test current I at an ambient temperature of 25C. BR T 3. Surge current waveforms per Figure 5. 4. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2