ESD5101, ESD5111 ESD Protection Diodes Micropackaged Diodes for ESD Protection The ESD51x1 Series is designed to protect voltage sensitive www.onsemi.com components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in MARKING smartphone, smart-watch, or many other portable / wearable DIAGRAMS applications where board space comes at a premium. ESD5101 (01005) Features DSN2 L Low Capacitance (5 pF Max, I/O to GND) CASE 152AK Small Body Outline Dimensions ESD5111 (0201) 01005 Size: 0.435 x 0.23 mm WLCSP2 0201 Size: 0.6 x 0.3 mm CASE 567AV Protection for the Following IEC Standards: ESD5111P (0201) IEC 6100042 (Level 4) DSN2 Low ESD Clamping Voltage CASE 152AX These Devices are PbFree, Halogen Free/BFR Free and are RoHS L, E, P = Device Code Compliant MAXIMUM RATINGS (T = 25C unless otherwise noted) J PIN CONFIGURATION Rating Symbol Value Unit AND SCHEMATIC Operating Junction Temperature Range T 55 to +125 C J Storage Temperature Range T 55 to +150 C stg 12 Lead Solder Temperature T 260 C L Maximum (10 Seconds) IEC 6100042 Contact (ESD) ESD 15 kV IEC 6100042 Air (ESD) ESD 15 kV = Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. See Application Note AND8308/D for further description of ORDERING INFORMATION survivability specs. See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2018 Rev. 6 ESD5101/D E PESD5101, ESD5111 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND 3.3 V RWM Breakdown Voltage V I = 1 mA, I/O Pin to GND 3.68 5.0 6.5 V BR T Reverse Leakage Current I V = 3.3 V, I/O Pin to GND 0.1 A R RWM ESD5101, ESD5111 V 5.5 V C I = 8 A IEC 6100042 Level 2 equivalent PP Clamping Voltage (4 kV Contact, 4 kV Air) TLP (Note 1) I = 16 A 6.5 PP IEC 6100042 Level 2 equivalent (8 kV Contact, 15 kV Air) Junction Capacitance C V = 0 V, f = 1 MHz 5.5 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 ORDERING INFORMATION Device Package Shipping ESD5101FCT5G DSN2 10,000 / Tape & Reel (PbFree) ESD5111FCT5G WLCSP2 10,000 / Tape & Reel (PbFree) ESD5111PFCT5G DSN2 10,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2