ESD5581 ESD Protection Diode MicroPackaged Diodes for ESD Protection The ESD5581 is designed to protect voltage sensitive components that require low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast www.onsemi.com response time, make these parts ideal for ESD protection on designs where board space is at a premium. Features 2 1 Low Clamping Voltage Small Body Outline Dimensions: 0.62 mm x 0.32 mm Low Body Height: 0.3 mm MARKING Standoff Voltage: 5 V DIAGRAM IEC6100042 Level 4 ESD Protection PIN 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS X3DFN2 M CASE 152AF Compliant Typical Applications 5 = Specific Device Code SD Card Protection M = Date Code Audio Line Protection GPIO X2DFN2 YC M CASE 714AB MAXIMUM RATINGS Rating Symbol Value Unit YC = Specific Device Code IEC 6100042 (ESD) Contact 30 kV M = Date Code Air 30 Total Power Dissipation on FR5 Board P 250 mW D (Note 1) T = 25C A Thermal Resistance, JunctiontoAmbient R 400 C/W JA ORDERING INFORMATION Junction and Storage Temperature Range T , T 55 to +150 C J stg Device Package Shipping Lead Solder Temperature Maximum T 260 C L (10 Second Duration) ESD5581MXT5G X3DFN2 10000 / Tape & (PbFree) Reel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ESD5581N2T5G X2DFN2 8000 / Tape & assumed, damage may occur and reliability may be affected. (PbFree) Reel 1. FR5 = 1.0 x 0.75 x 0.62 in. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: September, 2018 Rev. 8 ESD5581/D 5ESD5581 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T *See Application Note AND8308/D for detailed explanations of BiDirectional datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V 5.0 V RWM Breakdown Voltage (Note 2) V I = 1 mA 5.2 6.2 7.5 V BR T Reverse Leakage Current I V = 5 V 0.1 A R RWM Clamping Voltage (Note 3) V I = 1 A 8.0 V C PP Clamping Voltage (Note 3) V I = 4 A 10 V C PP Clamping Voltage (Note 3) V I = 6 A 10.3 12 V C PP Clamping Voltage (Note 4) V IEC6100042, 8 kV Contact See Figures 1 & 2 V C Peak Pulse Current (Note 3) I 6.0 A t = 8/20 s PP P I = 16 A Clamping Voltage V 11 V PP IEC 6100042 Level 4 equivalent C TLP (Note 5) (8 kV Contact, 15 kV Air) Dynamic Resistance R TLP Pulse 0.22 DYN Junction Capacitance C V = 0 V, f = 1 MHz 10 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 3. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. (See Figure 12) A 4. For test procedure see Figure 10 and application note AND8307/D. 5. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 TYPICAL CHARACTERISTICS 60 10 50 0 40 10 30 20 20 30 10 40 0 50 10 60 20 0 20 40 60 80 100 120 140 20 0 20 40 60 80 100 120 140 TIME (ns) TIME (ns) Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)