X-On Electronics has gained recognition as a prominent supplier of ESD5581N2T5G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. ESD5581N2T5G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

ESD5581N2T5G ON Semiconductor

ESD5581N2T5G electronic component of ON Semiconductor
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See Product Specifications
Part No.ESD5581N2T5G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes BIDIRECTIONAL 5V MID-CAP
Datasheet: ESD5581N2T5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.0755 ea
Line Total: USD 0.38 
Availability - 0
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 8000
Multiples : 8000
8000 : USD 0.0414
16000 : USD 0.041
24000 : USD 0.0381
56000 : USD 0.0352

0
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.0755
50 : USD 0.074
150 : USD 0.0729
500 : USD 0.0719
510 : USD 0.0687

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.36
10 : USD 0.294
100 : USD 0.1508
500 : USD 0.0954
1000 : USD 0.061
8000 : USD 0.0458

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ESD5581N2T5G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ESD5581N2T5G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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ESD5581 ESD Protection Diode MicroPackaged Diodes for ESD Protection The ESD5581 is designed to protect voltage sensitive components that require low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast www.onsemi.com response time, make these parts ideal for ESD protection on designs where board space is at a premium. Features 2 1 Low Clamping Voltage Small Body Outline Dimensions: 0.62 mm x 0.32 mm Low Body Height: 0.3 mm MARKING Standoff Voltage: 5 V DIAGRAM IEC6100042 Level 4 ESD Protection PIN 1 These Devices are PbFree, Halogen Free/BFR Free and are RoHS X3DFN2 M CASE 152AF Compliant Typical Applications 5 = Specific Device Code SD Card Protection M = Date Code Audio Line Protection GPIO X2DFN2 YC M CASE 714AB MAXIMUM RATINGS Rating Symbol Value Unit YC = Specific Device Code IEC 6100042 (ESD) Contact 30 kV M = Date Code Air 30 Total Power Dissipation on FR5 Board P 250 mW D (Note 1) T = 25C A Thermal Resistance, JunctiontoAmbient R 400 C/W JA ORDERING INFORMATION Junction and Storage Temperature Range T , T 55 to +150 C J stg Device Package Shipping Lead Solder Temperature Maximum T 260 C L (10 Second Duration) ESD5581MXT5G X3DFN2 10000 / Tape & (PbFree) Reel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ESD5581N2T5G X2DFN2 8000 / Tape & assumed, damage may occur and reliability may be affected. (PbFree) Reel 1. FR5 = 1.0 x 0.75 x 0.62 in. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: September, 2018 Rev. 8 ESD5581/D 5ESD5581 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T *See Application Note AND8308/D for detailed explanations of BiDirectional datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V 5.0 V RWM Breakdown Voltage (Note 2) V I = 1 mA 5.2 6.2 7.5 V BR T Reverse Leakage Current I V = 5 V 0.1 A R RWM Clamping Voltage (Note 3) V I = 1 A 8.0 V C PP Clamping Voltage (Note 3) V I = 4 A 10 V C PP Clamping Voltage (Note 3) V I = 6 A 10.3 12 V C PP Clamping Voltage (Note 4) V IEC6100042, 8 kV Contact See Figures 1 & 2 V C Peak Pulse Current (Note 3) I 6.0 A t = 8/20 s PP P I = 16 A Clamping Voltage V 11 V PP IEC 6100042 Level 4 equivalent C TLP (Note 5) (8 kV Contact, 15 kV Air) Dynamic Resistance R TLP Pulse 0.22 DYN Junction Capacitance C V = 0 V, f = 1 MHz 10 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 3. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. (See Figure 12) A 4. For test procedure see Figure 10 and application note AND8307/D. 5. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 TYPICAL CHARACTERISTICS 60 10 50 0 40 10 30 20 20 30 10 40 0 50 10 60 20 0 20 40 60 80 100 120 140 20 0 20 40 60 80 100 120 140 TIME (ns) TIME (ns) Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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