X-On Electronics has gained recognition as a prominent supplier of ESD5481MUT3G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. ESD5481MUT3G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

ESD5481MUT3G ON Semiconductor

Hot ESD5481MUT3G electronic component of ON Semiconductor
ESD5481MUT3G ON Semiconductor
ESD5481MUT3G ESD Suppressors / TVS Diodes
ESD5481MUT3G  Circuit Protection

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See Product Specifications
Part No. ESD5481MUT3G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes ESD PROTECTION DIODE
Datasheet: ESD5481MUT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1429: USD 0.0065 ea
Line Total: USD 9.29 
Availability - 7093
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ: 1429  Multiples: 1
Pack Size: 1
Availability Price Quantity
7093
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 7313
Multiples : 1
7313 : USD 0.0071
9259 : USD 0.007
9434 : USD 0.0069
9615 : USD 0.0068
9804 : USD 0.0066
10000 : USD 0.0065
10204 : USD 0.0063
10417 : USD 0.0062

9312
Ship by Wed. 01 Jan to Fri. 03 Jan
MOQ : 1
Multiples : 1
1 : USD 0.1859
10 : USD 0.1001
100 : USD 0.0407
10000 : USD 0.0363

223100
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 8956
Multiples : 1
8956 : USD 0.0545

7604800
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 8956
Multiples : 1
8956 : USD 0.0545

232800
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 8956
Multiples : 1
8956 : USD 0.0545

7093
Ship by Fri. 03 Jan to Thu. 09 Jan
MOQ : 1429
Multiples : 1
1429 : USD 0.0065
3000 : USD 0.0063
6000 : USD 0.0062

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ESD5481MUT3G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ESD5481MUT3G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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ESD5481 ESD Protection Diode MicroPackaged Diodes for ESD Protection The ESD5481 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are www.onsemi.com exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space comes at a premium. 12 Specification Features Low Capacitance 15 pF Low Clamping Voltage MARKING Small Body Outline Dimensions: 0.60 mm x 0.30 mm DIAGRAM Low Body Height: 0.3 mm PIN 1 Standoff Voltage: 5.0 V X3DFN2 A M CASE 152AF Low Leakage Response Time is < 1 ns A = Specific Device Code IEC6100042 Level 4 ESD Protection M = Date Code IEC6100044 Level 4 EFT Protection These Devices are PbFree, Halogen Free/BFR Free and are RoHS ORDERING INFORMATION Compliant Device Package Shipping Mechanical Characteristics ESD5481MUT5G X3DFN2 10,000 / MOUNTING POSITION: Any (PbFree) Tape & Reel QUALIFIED MAX REFLOW TEMPERATURE: 260C Device Meets MSL 1 Requirements For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications MAXIMUM RATINGS Brochure, BRD8011/D. Rating Symbol Value Unit IEC 6100042 (ESD) Contact 20 kV Air 20 IEC 6100044 (EFT) 5/50 ns 40 A Total Power Dissipation on FR5 Board P 300 mW D (Note 1) T = 25C A Thermal Resistance, JunctiontoAmbient R 400 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: September, 2017 Rev. 9 ESD5481/DESD5481 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current R PP DYN I T V Clamping Voltage I I V V V C PP R C BR RWM V I V V V R V Working Peak Reverse Voltage RWM BR C RWM I T I Maximum Reverse Leakage Current V R R RWM DYN V Breakdown Voltage I BR T I PP I Test Current T R Dynamic Resistance DYN BiDirectional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to I/O Pin 5.0 V RWM Breakdown Voltage V I = 5 A 4.5 10 V BR T Breakdown Voltage V I = 1 mA 5.7 8.0 V BR T Reverse Leakage Current I V = 5.0 V 1.0 A R RWM Clamping Voltage (Note 2) V IEC6100042, 8 kV Contact See Figures 1 and 2 V C Clamping Voltage TLP V 19.7 23 V I = 16 A IEC 6100042 Level 2 equivalent C PP (Note 3) 11 13 I = 16 A (8 kV Contact, 15 kV Air) PP Clamping Voltage 8/20 s V I = 1 A 9.8 12 V PP C Waveform per Figure 10 12.4 15 I = 2 A PP Dynamic Resistance R Pin 1 to Pin 2 0.49 DYN Pin 2 to Pin 1 0.28 Reverse Peak Pulse Current I per IEC 6100045 (8/20 s) Figure 10 2.0 A PP Junction Capacitance C V = 0 V, f = 1 MHz 12 15 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. For test procedure see application note AND8307/D. 3. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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