T ESD7321 ESD Protection Diodes Low Capacitance ESD Protection Diode for High Speed Data Lines The ESD7321 ESD protection diodes are designed to protect high www.onsemi.com speed data lines from ESD. Low capacitance and low ESD clamping voltage make this device an ideal solution for protecting voltage MARKING sensitive high speed data lines. DIAGRAM Features PIN 1 Low Capacitance (0.5 pF Max, I/O to GND) X3DFN2 Protection for the Following IEC Standards: M CASE 152AF IEC 6100042 (Level 4) Low ESD Clamping Voltage T = Specific Device Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS (Rotated 90 clockwise) M = Date Code Compliant Typical Applications PIN CONFIGURATION USB 3.x AND SCHEMATIC MHL 2.0 SATA/SAS 12 PCI Express MAXIMUM RATINGS (T = 25C unless otherwise noted) J ORDERING INFORMATION Rating Symbol Value Unit Device Package Shipping Operating Junction Temperature Range T 55 to +125 C J ESD7321MUT5G X3DFN2 10000 / Tape & Storage Temperature Range T 55 to +150 C stg (PbFree) Reel Lead Solder Temperature T 260 C For information on tape and reel specifications, L Maximum (10 Second Duration) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications IEC 6100042 Contact (ESD) ESD 15 kV Brochure, BRD8011/D. IEC 6100042 Air (ESD) ESD 15 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2016 Rev. 2 ESD7321/DESD7321 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional ESD *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Parameter Symbol Condition Min Typ Max Unit Reverse Working Voltage V 7.0 V RWM Breakdown Voltage V I = 1 mA (Note 1) 8.0 V BR T Reverse Leakage Current I V = 7.0 V, I/O to GND 200 nA R RWM Clamping Voltage V I = 8 A (IEC6100042 Level 2 Equivalent 18 V C PP (4 kV Contact, 8 kV Air)) ESD Clamping Voltage V Per IEC 6100042 See Figures 1 and 2 C Junction Capacitance C V = 0 V, f = 1 MHz 0.5 pF J R Dynamic Resistance R TLP Pulse 1 DYN Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2