ESD8101, ESD8111 ESD Protection Diodes Ultra Low Capacitance ESD Protection Diode for High Speed Data Line The ESD81x1 Series ESD protection diodes are designed to protect www.onsemi.com high speed data lines from ESD. Ultralow capacitance and low ESD clamping voltage make this device an ideal solution for protecting voltage sensitive high speed data lines. MARKING DIAGRAMS Features Low Capacitance (0.20 pF Typ, I/O to GND) ESD8101 (01005) DSN2 Protection for the Following IEC Standards: T CASE 152AK IEC 6100042 (Level 4) Low ESD Clamping Voltage ESD8111 (0201) F These Devices are PbFree, Halogen Free/BFR Free and are RoHS WLCSP2 CASE 567AV Compliant ESD8111P (0201) Typical Applications WLCSP2 USB 3.0/3.1 CASE 152AX MHL 2.0 T, F, Q = Device Code eSATA MAXIMUM RATINGS (T = 25C unless otherwise noted) J PIN CONFIGURATION Rating Symbol Value Unit AND SCHEMATIC Operating Junction Temperature Range T 55 to +150 C J Storage Temperature Range T 55 to +150 C stg 12 Lead Solder Temperature T 260 C L Maximum (10 Seconds) ESD8101: ESD IEC 6100042 Contact 23 kV = IEC 6100042 Air 23 kV ESD8111: IEC 6100042 Contact 30 kV IEC 6100042 Air 30 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. See detailed ordering and shipping information on page 2 of this data sheet. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2016 Rev. 5 ESD8101/D QESD8101, ESD8111 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter R DYN V Working Peak Voltage RWM I HOLD I Maximum Reverse Leakage Current V R RWM I T V V Breakdown Voltage I V V V V BR T BR C RWM HOLD I R I V V R V V BR HOLD RWM C I Test Current I T T I V Holding Reverse Voltage HOLD HOLD I Holding Reverse Current HOLD R DYN R Dynamic Resistance DYN I PP I Maximum Peak Pulse Current PP V = V + (I * R ) C HOLD PP DYN V Clamping Voltage I C PP V = V + (I * R ) C HOLD PP DYN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND 3.3 V RWM Breakdown Voltage V I = 1 mA, I/O Pin to GND 5.5 7.9 8.6 V BR T Reverse Leakage Current I V = 3.3 V, I/O Pin to GND 1.0 A R RWM Reverse Holding Voltage V I/O Pin to GND 2.1 V HOLD Holding Reverse Current I I/O Pin to GND 17 mA HOLD ESD8111 V 8.0 V I = 7.1 A, (8/20 s pulse) C PP Clamping Voltage ESD8101, ESD8111 V 6.5 V I = 8 A IEC 6100042 Level 2 equivalent C PP Clamping Voltage (4 kV Contact, 4 kV Air) TLP (Note 1) I = 16 A 10 PP IEC 6100042 Level 2 equivalent (8 kV Contact, 15 kV Air) Dynamic Resistance R I/O Pin to GND 0.46 DYN Junction Capacitance C V = 0 V, f = 1 MHz 0.2 0.4 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 ORDERING INFORMATION Device Package Shipping ESD8101FCT5G DSN2 10,000 / Tape & Reel (PbFree) ESD8111FCT5G WLCSP2 10,000 / Tape & Reel (PbFree) ESD8111PFCT5G WLCSP2 Side wall Isolated 0201 10,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2