ESDAVLC6-1BV2 STMicroelectronics

ESDAVLC6-1BV2 Single line low capacitance Transil for ESD protection Datasheet production data Features PCB area: 0.09 mm Bidirectional device Low capacitance: 8 pF max. Minimum breakdown voltage V = 6 V BR Low leakage current: lower than 50 nA at 3 V RoHS compliant ST01005 Applications ESDAVLC6-1BV2 Where transient over voltage protection in ESD sensitive equipment is required, such as: Figure 1. Functional diagram Portable multimedia devices and accessories MID, netbooks and notebooks Pin1 Digital cameras and camcorders Communication systems Smart phones and accessories Description The ESDAVLC6-1BV2 is a single line bidirectional Transil diode designed specially for the protection of integrated circuits in portable equipment and miniaturized electronic devices subject to ESD transient overvoltage. The device is ideal for applications where both reduced printed circuit board space and high ESD protection levels are required. TM: Transil is a trademark of STMicroelectronics March 2014 DocID023822 Rev 2 1/9 This is information on a product in full production. www.st.comCharacteristics ESDAVLC6-1BV2 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 12 V Peak pulse voltage kV PP IEC 61000-4-2 air discharge 15 (1) I Peak pulse current (8/20 s) 2.5 A PP (1) P Peak pulse power (8/20 s) 45 W PP T Operating temperature range -55 to +150 C j T Storage temperature range - 65 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 2. Electrical characteristics (definitions) I Symbol Parameter V = Breakdown voltage BR V = Stand-off voltage RM V = Clamping voltage CL I = Leakage current V RM RM V V V CL BR RM I = Peak pulse current V PP I RM V V V RM BR CL R = Dynamic resistance D Line capacitance C = LINE Slope: 1/R d IPP Table 2. Electrical characteristics (values, T = 25 C) amb Value Unit Symbol Parameter Test conditions Min. Typ. Max. V Breakdown voltage I = 1 mA 6 V BR R I Leakage current V = 3 V 50 nA RM RM I = 1 A, 8/20 s 12 PP V Clamping voltage V CL I = 2.5 A maximum, 8/20 s 18 PP C Line capacitance, I/O to GND V = 0 V, F = 1 MHz, V = 30 mV 7.5 8 pF line R osc I/O to GND 1.43 Dynamic resistance, pulse R d width 100 ns GND to I/O 1.38 2/9 DocID023822 Rev 2