ESDAVLC8-1BT2Y Automotive single-line low capacitance Transil, transient surge voltage suppressor (TVS) for ESD protection Datasheet production data Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: Automotive applications Computers Printers Communication systems Cellular phone handsets and accessories SOD882T ESDAVLC8-1BT2Y Video equipment Description Features The ESDAVLC8-1BT2Y is a bidirectional single- Single-line bidirectional protection line TVS diode designed to protect data lines or other I/O ports against ESD transients. Breakdown voltage = 8.5 V min. This device is ideal for applications where both Very low capacitance = 4.5 pF at 0 V printed circuit board space and power absorption Lead-free packages capability are required. ECOPACK 2 compliant component Figure 1. Functional diagram AEC-Q101 qualified Benefits I/O1 Very low capacitance for optimized data integrity Very low reverse current < 50 nA 2 Low PCB space consumption: 0.6 mm I/O2 High reliability offered by monolithic integration Complies with the following standards: IEC 61000-4-2 (exceeds level 4) 17 kV (air discharge) 17 kV (contact discharge) ISO10605: C = 330 pF, R = 330 15 kV (air discharge) 8 kV (contact discharge) MIL STD 883G - Method 3015-7: class 3 HBM (human body model) TM: Transil is a trademark of STMicroelectronics July 2014 DocID025558 Rev 2 1/13 This is information on a product in full production. www.st.comCharacteristics ESDAVLC8-1BT2Y 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 17 IEC 61000-4-2 air discharge 17 (1) V Peak pulse voltage ISO10605 contact discharge 8 kV PP ISO10605 air discharge 15 MIL STD 883G - Method 3015-7: class 3 25 (1) P Peak pulse power dissipation (8/20 s) T initial = T 30 W PP j amb I Peak pulse current (8/20 s) 1.3 A PP T Operating junction temperature range - 50 to + 125 C OP T Storage temperature range - 65 to + 125 C stg T Maximum lead temperature for soldering during 10 s 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 2. Electrical characteristics (definitions) I Symbol Parameter V = Breakdown voltage BR R D V = Clamping voltage CL I = Leakage current V RM RM V V V V V CL Trig BR RM V = Stand-off voltage RM I = Peak pulse current I RM PP I = Breakdown current R V = Triggering voltage TRIG I C = Input capacitance per line R line R = Dynamic resistance D I PP Table 2. Electrical characteristics (values, T = 25 C) amb Symbol Test condition Min. Typ. Max. Unit From I/O 1 to I/O 2, I = 1 mA 14.5 17 20 R V V BR From I/O 2 to I/O 1, I = 1 mA 8.5 11 14 R I V = 3 V 50 nA RM RM C F = 1 MHz, V = 0 V 4.5 5.5 pF line R 2/13 DocID025558 Rev 2