ESDAXLC6-1BT2Y Datasheet Automotive single line ESD protection for high speed lines in 0402 Features AEC-Q101 qualified Flow-through routing to keep signal integrity Ultra large bandwidth: 12 GHz Ultra low capacitance: 0.4 pF Extended operating junction temperature range: -55 C to 150 C RoHS compliant Complies with ISO 10605 - C = 150 pF, R = 330 16 kV (contact discharge) 30 kV (air discharge) Complies with ISO 10605 - C = 330 pF, R = 330 12 kV (contact discharge) 30 kV (air discharge) Complies with ISO 7637-3: pulse 3a: V = -150 V s pulse 3b: V = +150 V s pulse 2a: V = 85 V s Application Product status link The ESDAXLC6-1BT2Y is designed to protect against electrostatic discharge on automotive circuits such as: ESDAXLC6-1BT2Y APIX LVDS & digital video interface Ethernet and BroadrReach USB 2.0 and USB 3.0 High speed communication buses RF front-end Description The ESDAXLC6-1BT2Y is an ESD device designed for high-speed lines protection. DS10560 - Rev 2 - May 2021 www.st.com For further information contact your local STMicroelectronics sales office.ESDAXLC6-1BT2Y Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit ISO10605 / IEC 61000-4-2 (C = 150 pF, R = 330 ): Contact discharge 16 Air discharge 30 V Peak pulse voltage kV PP ISO10605 (C = 330 pF, R = 330 ) Contact discharge 12 Air discharge 30 P Peak pulse power dissipation (8/20 s) 40 W PP I Peak Pulse current (8/20 s) 1.3 A PP T Storage temperature range -65 to +150 C stg T Operating junction temperature range -55 to +150 C j T Maximum lead temperature for soldering during 10 s 260 C L Figure 1. Electrical characteristics (definitions) I pp Stand-off voltage Table 2. Electrical characteristics (values) (T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6 9 11 V BR R I V = 3 V 50 nA R R I = 1 A, 8/20 s 17 PP ISO 10605- C = 150 pF, R = 330 V V CL 37 +8 kV contact discharge, measured at 30 ns TLP, pulse duration 100 ns, 16 A 41 R TLP, pulse duration 100 ns, 16 A 2 d C V = 0 V, 200 MHz < f < 3 GHz, V = 30 mV 0.4 0.5 pF I/O-GND I/O OSC f S = -3 dB C 21 12 GHz DS10560 - Rev 2 page 2/13