ESDAVLC5-4BX4 STMicroelectronics

ESDAVLC5-4BX4 4-line bidirectional Transil, transient surge voltage suppressor for ESD protection Datasheet - production data Features 2 1 4 bidirectional Transil diodes Breakdown voltage V = 5.5 V min. BR Low leakage current: < 50 nA GND 2 Very small PCB area: 0.64 mm Lead-free and RoHS compliant 3 4 Complies with the following standards IEC 61000-4-2 level 4: 4-lead micro package 15 kV (air discharge) 8 kV (contact discharge) Figure 1. Functional diagram Applications IO1 IO2 IO3 IO4 Where transient over voltage protection in ESD sensitive equipment is required, such as: Mobile phones Portable multimedia devices and accessories Computers, tablets and peripherals Set top boxes Audio equipment Description GND The ESDAVLC5-4BX4 is monolithic array designed to protect up to 4 bidirectional lines against ESD transients. The device is ideal for applications where both reduced printed circuit board space and high ESD protection level are required. TM: Transil is a trademark of STMicroelectronics June 2014 DocID023365 Rev 2 1/8 This is information on a product in full production. www.st.comCharacteristics ESDAVLC5-4BX4 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 16 (1) V Peak pulse voltage kV PP IEC 61000-4-2 air discharge 16 I Peak pulse current (8/20 s) 2 A PP P Peak pulse power (8/20 s) 30 W PP T Operating temperature range -30 to +85 C j T Storage temperature range - 55 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 2. Electrical characteristics (definitions) I Symbol Parameter V = Breakdown voltage BR V = Stand-off voltage RM V = Clamping voltage CL I = Leakage current V RM RM V V V CL BR RM I = Peak pulse current V PP I RM V V V RM BR CL R = Dynamic resistance D Line capacitance C = LINE Slope: 1/R d IPP Table 2. Electrical characteristics (values, T = 25 C) amb Value Unit Symbol Parameter Test conditions Min. Typ. Max. V Breakdown voltage I = 1 mA 5.5 V BR R I Leakage current V = 3 V 50 nA RM RM V Clamping voltage I = 1 A, 8/20 s 18 V CL PP V = 0 V, F = 1 MHz, R osc C Line capacitance, I/O to GND 10 pF line V = 30 mV osc I/O to GND 0.53 R Dynamic resistance, pulse width 100 ns d GND to I/O 0.37 2/8 DocID023365 Rev 2