ESDARF02-1BU2CK STMicroelectronics

ESDARF02-1BU2CK Single-line bidirectional ESD protection for high speed interface Datasheet production data Features Bidirectional device Extra low diode capacitance: 0.2 pF Very high bandwidth: 30 GHz Low leakage current 0201 SMD package size compatible 2 Ultra small PCB area: 0.18 mm ECOPACK 2 and RoHS compliant component Pin1 available in different shapes ST0201 package Complies with the following standards: IEC 61000-4-2 level 4 Figure 1. Functional diagram (top view) 15 kV (air discharge) 8 kV (contact discharge) Pin1 Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: Smartphones, mobile phone and accessories Tablet PCs, netbooks and notebooks Portable multimedia devices and accessories Digital cameras and camcorders Communication and highly integrated systems Description The ESDARF02-1BU2CK is a bidirectional single line TVS diode designed to protect the data lines or other I/O ports against ESD transients. The device is ideal for applications where both reduced line capacitance and board space saving are required. January 2017 DocID025014 Rev 3 1/9 This is information on a product in full production. www.st.comCharacteristics ESDARF02-1BU2CK 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit Peak pulse voltage: V IEC 61000-4-2 contact discharge 8 kV PP IEC 61000-4-2 air discharge 20 P Peak pulse power (8/20 s) 20 W PP I Peak pulse current (8/20 s) 1.5 A PP T Operating junction temperature range -40 to +150 C j T Storage temperature range -65 to +150 C stg T Maximum lead temperature for soldering during 10 s 260 C L Note: For a surge greater than the maximum values, the diode will fail in short-circuit Figure 2. Electrical characteristics (definitions) Symbol Parameter V = Breakdown voltage BR V = Stand-off voltage RM I = Leakage current V RM RM I = Peak pulse current PP R = Dynamic impedance d T = Voltage temperature coefficient C = Parasite capacitance Table 2. Electrical characteristics (values, T = 25 C) amb Symbol Test Condition Min. Typ. Max. Unit V I = 1 mA 5 6.6 V BR R I V = 3.6 V 5 100 nA RM RM V I = 1 A, 8/20 A 10 12 V CL PP R Dynamic resistance, pulse duration 100 ns 1.3 d C F = (200 MHz- 3000 MHz), V = 0 V 0.2 0.3 pF line R fc -3 dB 30 GHz 2/9 DocID025014 Rev 3