ESDAULC45-1BF4 STMicroelectronics

ESDAULC5-1BF4 Datasheet Low clamping and ultra low capacitance single line bidirectional ESD protection Features Low clamping voltage: Bidirectional diode Dynamic resistance Rd = 0.3 typ. Low leakage current ST0201 package size compatible Ultra small PCB area: 0.18 mm ST0201 package ECOPACK2 compliant component Complies with the following standards: IEC 61000-4-2 level 4 30 kV (air discharge) 30 kV (contact discharge) Application Where transient over voltage protection in ESD sensitive equipment is required, such as: Smartphones, mobile phones and accessories Tablet, PC, netbooks and notebooks Portable multimedia devices and accessories Digital cameras and camcorders Communication and highly integrated systems Product status link Description ESDAULC5-1BF4 The ESDAULC5-1BF4 is a bidirectional single line TVS diode designed to protect the data line or other I/O ports against ESD transients. The device is ideal for applications where both reduced line capacitance and board space saving are required. DS10172 - Rev 2 - May 2021 www.st.com For further information contact your local STMicroelectronics sales office.ESDAULC5-1BF4 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 30 (1) V Peak pulse voltage kV pp IEC 61000-4-2 air discharge 30 (1) P Peak pulse power (8/20 s) 140 W pp (1) I Peak pulse current (8/20 s) 10 A pp T Operating junction temperature range -40 to 150 j T Storage junction temperature range -65 to 150 C stg T Maximum lead temperature for soldering during 10 s 260 L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Figure 1. Electrical characteristics (definitions) Symbol Parameter V Breakdown voltage = BR V Clamping voltage CL = V CL I Leakage current at V = RM RM V CL V = Stand-off voltage RM I = Peak pulse current PP R Dynamic resistance = d Voltage temperature T = Slope:1/R d I PP Line capacitance C = LINE Table 2. Electrical characteristics (values) (T = 25 C) amb Symbol Parameter Test condition Min. Typ. Max. Unit V Breakdown voltage I = 1 mA 5.8 8.5 V BR R I V = 3 V Leakage current 70 nA RM RM IEC 61000-4-2, 8 kV V Clamping voltage 13.5 V CL contact measured at 30 ns R Dynamic resistance, pulse duration 100 ns, I/O to GND 0.3 D C Line capacitance V = 0 V, F = 1 MHz, V = 30 mV 1.5 3 pF LINE LINE OSC DS10172 - Rev 2 page 2/10