X-On Electronics has gained recognition as a prominent supplier of ESD8011MUT5G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. ESD8011MUT5G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

ESD8011MUT5G ON Semiconductor

ESD8011MUT5G electronic component of ON Semiconductor
ESD8011MUT5G ON Semiconductor
ESD8011MUT5G ESD Suppressors / TVS Diodes
ESD8011MUT5G  Circuit Protection

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See Product Specifications
Part No. ESD8011MUT5G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ON Semiconductor ESD Suppressors ULTRA LOW CAP SCR
Datasheet: ESD8011MUT5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3587 ea
Line Total: USD 0.36 
Availability - 107542
Ship by Mon. 07 Apr to Wed. 09 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
29100
Ship by Wed. 09 Apr to Tue. 15 Apr
MOQ : 10000
Multiples : 10000
10000 : USD 0.0951
30000 : USD 0.0915
50000 : USD 0.091
100000 : USD 0.0906
150000 : USD 0.0901
250000 : USD 0.0896

4
Ship by Wed. 16 Apr to Mon. 21 Apr
MOQ : 5
Multiples : 5
5 : USD 0.2993
50 : USD 0.2331
150 : USD 0.1755
500 : USD 0.1308
2500 : USD 0.1186
5000 : USD 0.1083

107542
Ship by Mon. 07 Apr to Wed. 09 Apr
MOQ : 1
Multiples : 1
1 : USD 0.3587
10 : USD 0.2875
100 : USD 0.1668
500 : USD 0.1419
1000 : USD 0.1023
2500 : USD 0.0946
10000 : USD 0.0858
20000 : USD 0.0858
50000 : USD 0.0825

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Operating Supply Voltage
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ESD8011MUT5G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ESD8011MUT5G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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R ESD8011 ESD Protection Diodes Ultra Low Capacitance ESD Protection Diode for High Speed Data Line The ESD8011 ESD protection diodes are designed to protect high www.onsemi.com speed data lines from ESD. Ultralow capacitance and low ESD clamping voltage make this device an ideal solution for protecting MARKING voltage sensitive high speed data lines. DIAGRAM Features PIN 1 Ultra Low Capacitance (0.10 pF Typ, I/O to GND) X3DFN2 M CASE 152AF Protection for the Following IEC Standards: IEC 6100042 (Level 4) R = Specific Device Code Low ESD Clamping Voltage (Rotated 90 clockwise) These Devices are PbFree, Halogen Free/BFR Free and are RoHS M = Date Code Compliant Typical Applications PIN CONFIGURATION AND SCHEMATIC USB 3.x MHL 2.0 SATA/SAS 12 PCI Express MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit Operating Junction Temperature Range T 55 to +125 C J Storage Temperature Range T 55 to +150 C stg Lead Solder Temperature T 260 C L Maximum (10 Seconds) IEC 6100042 Contact (ESD) ESD 20 kV ORDERING INFORMATION IEC 6100042 Air (ESD) ESD 20 kV See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. Maximum Peak Pulse Current I 3.6 A pp 8/20 s T = 25C A Maximum Peak Pulse Power P 34 W pk 8/20 s T = 25C A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2016 Rev. 4 ESD8011/D =ESD8011 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter R DYN V Working Peak Voltage RWM I HOLD I Maximum Reverse Leakage Current V R RWM I T V V Breakdown Voltage I V V V V BR T BR C RWM HOLD I R I V V R V V BR HOLD RWM C I Test Current I T T I V Holding Reverse Voltage HOLD HOLD I Holding Reverse Current HOLD R DYN R Dynamic Resistance DYN I PP I Maximum Peak Pulse Current PP V = V + (I * R ) C HOLD PP DYN V Clamping Voltage I C PP V = V + (I * R ) C HOLD PP DYN ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND 5.5 V RWM Breakdown Voltage V I = 1 mA, I/O Pin to GND 6.5 7.3 V BR T Reverse Leakage Current I V = 5.5 V, I/O Pin to GND 1.0 A R RWM Reverse Holding Voltage V I/O Pin to GND 2.05 V HOLD Holding Reverse Current I I/O Pin to GND 17 mA HOLD Clamping Voltage V 11.0 V I = 8 A IEC6100042 Level 2 Equivalent C PP TLP (Note 2) (4 kV Contact, 8 kV Air) I = 16 A 19.0 PP IEC6100042 Level 2 Equivalent (8 kV Contact, 16 kV Air) Dynamic Resistance R Pin1 to Pin2 1.0 DYN Pin2 to Pin1 1.0 Junction Capacitance C V = 0 V, f = 1 MHz 0.10 0.20 pF J R Series Inductance L V = 0 V 0.3 nH S R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. For test procedure see Figure 5 and application note AND8307/D. 2. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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