ESD8106 ESD Protection Diode Low Capacitance ESD Protection for USB 3.0 Interface The ESD8106 surge protection is specifically designed to protect www.onsemi.com USB 3.0 interfaces by integrating two Superspeed pairs, D+ and D lines into a single protection product. Ultralow capacitance and low MARKING ESD clamping voltage make this device an ideal solution for DIAGRAM protecting voltage sensitive high speed data lines. The flowthrough 14 style package allows for easy PCB layout and matched trace lengths 1 6DM necessary to maintain consistent impedance between high speed UDFN14 differential lines. CASE 517CQ 6D = Specific Device Code Features M = Date Code Low Capacitance (0.35 pF Max, I/O to GND) = PbFree Package Protection for the Following IEC Standards: IEC 6100042 Level 4 UL Flammability Rating of 94 V0 PIN CONFIGURATION These Devices are PbFree, Halogen Free/BFR Free and are RoHS I/O I/O I/O I/O GND I/O I/O Compliant 14 13 12 11 10 9 8 Typical Applications USB 3.0 45 12 3 67 MAXIMUM RATINGS (T = 25C unless otherwise noted) J *N/C N/C N/C N/C GND N/C N/C Rating Symbol Value Unit *Pins 17 should be connected to opposite pin Operating Junction Temperature Range T 55 to +125 C J with PCB trace in order to maintain a flowthru routing scheme. Storage Temperature Range T 55 to +150 C stg Lead Solder Temperature T 260 C L Maximum (10 Seconds) ORDERING INFORMATION IEC 6100042 Contact (ESD) ESD 15 kV Device Package Shipping IEC 6100042 Air (ESD) ESD 15 kV Stresses exceeding those listed in the Maximum Ratings table may damage the ESD8106MUTAG UDFN14 3000 / Tape & Reel device. If any of these limits are exceeded, device functionality should not be (PbFree) assumed, damage may occur and reliability may be affected. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: November, 2017 Rev. 2 ESD8106/DESD8106 Pin 8 Pin 9 Pin 11 Pin 12 Pin 13 Pin 14 Pins 5, 10 Note: Common GND Only minimum of 1 GND connection required = Figure 1. Pin Schematic ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Peak Pulse Current R PP DYN V Clamping Voltage I C PP V Working Peak Reverse Voltage V V V RWM CL BR RWM V I V I Maximum Reverse Leakage Current V R CL R RWM I T V Breakdown Voltage I BR T R I Test Current DYN T R Dynamic Resistance DYN *See Application Note AND8308/D for detailed explanations of I PP datasheet parameters. UniDirectional ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working V I/O Pin to GND 3.3 V RWM Voltage Breakdown Voltage V I = 1 mA, I/O Pin to GND 4.0 5.0 V BR T Reverse Leakage I V = 3.3 V, I/O Pin to GND 1.0 A R RWM Current Dynamic Resistance R (Note 1) 0.45 DYN Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins and GND 0.30 0.35 pF J R V = 0 V, f = 1 MHz between I/O Pins 0.10 0.20 R V = 0 V, f = 1 MHz, T = 65C between I/O Pins and GND 0.37 0.47 R A 1. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 www.onsemi.com 2