X-On Electronics has gained recognition as a prominent supplier of ESD8104MUTAG ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. ESD8104MUTAG ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

ESD8104MUTAG ON Semiconductor

ESD8104MUTAG electronic component of ON Semiconductor
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Part No.ESD8104MUTAG
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes LOW CAP ESD PROTECTION
Datasheet: ESD8104MUTAG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2737 ea
Line Total: USD 1.37 
Availability - 3368
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
17460
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.2274
6000 : USD 0.2158
9000 : USD 0.2125
12000 : USD 0.2092
27000 : USD 0.2061
51000 : USD 0.203
102000 : USD 0.2

3368
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2737
50 : USD 0.2268
150 : USD 0.2066
500 : USD 0.1631
3000 : USD 0.1519
6000 : USD 0.1453

   
Manufacturer
Product Category
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the ESD8104MUTAG from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ESD8104MUTAG and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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ESD8104 ESD Protection Diode Low Capacitance Array for High Speed Data Lines The ESD8104 is designed to protect high speed data lines from www.onsemi.com ESD. Ultralow capacitance and low ESD clamping voltage make this device an ideal solution for protecting voltage sensitive high speed MARKING data lines. The flowthrough style package allows for easy PCB layout DIAGRAM and matched trace lengths necessary to maintain consistent impedance between high speed differential lines such as USB 3.0/3.1 and HDMI UDFN10 4C M 2.0. CASE 517BB Features 4C = Specific Device Code (tbd) Low Capacitance (0.37 pF Max, I/O to GND) M = Date Code Protection for the Following IEC Standards: = PbFree Package IEC 6100042 (Level 4) (Note: Microdot may be in either location) Low ESD Clamping Voltage SZ Prefix for Automotive and Other Applications Requiring Unique PIN CONFIGURATION Site and Control Change Requirements AECQ101 Qualified and AND SCHEMATIC PPAP Capable N/C N/C GND N/C N/C These Devices are PbFree, Halogen Free/BFR Free and are RoHS 10 98 7 6 Compliant Typical Applications 1423 5 USB 3.0/3.1 I/O I/O GND I/O I/O eSATA I/O I/O I/O I/O HDMI 1.3/1.4/2.0 Pin 1 Pin 2 Pin 4 Pin 5 DisplayPort MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit Operating Junction Temperature Range T 55 to +125 C J Pins 3, 8 Storage Temperature Range T 55 to +150 C stg Note: Common GND Only Minimum of 1 GND connection required Lead Solder Temperature T 260 C L Maximum (10 Seconds) IEC 6100042 Contact (ESD) ESD 15 kV IEC 6100042 Air (ESD) ESD 15 kV = Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Device Package Shipping ESD8104MUTAG UDFN10 3000 / (PbFree) Tape & Reel SZESD8104MUTAG UDFN10 3000 / (PbFree) Tape & Reel See Application Note AND8308/D for further description of For information on tape and reel specifications, including part orientation and tape sizes, please survivability specs. refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: November, 2017 Rev. 8 ESD8104/DESD8104 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Peak Pulse Current R PP DYN V Clamping Voltage I C PP V Working Peak Reverse Voltage V V V RWM CL BR RWM V I I Maximum Reverse Leakage Current V R V CL R RWM I T V Breakdown Voltage I BR T I Test Current R T DYN R Dynamic Resistance DYN *See Application Note AND8308/D for detailed explanations of I PP datasheet parameters. UniDirectional ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND 3.3 V RWM Breakdown Voltage V I = 1 mA, I/O Pin to GND 4.0 5.0 V BR T Reverse Leakage Current I V = 3.3 V, I/O Pin to GND 1.0 A R RWM Clamping Voltage V IEC6100042, 8 kV Contact See Figures 1 and 2 V C (Note 1) Clamping Voltage V V I = 8 A IEC 6100042 Level 2 equivalent 8.5 C PP TLP (Note 2) 4.5 I = 8 A (4 kV Contact, 4 kV Air) PP See Figures 5 through 8 I = 16 A 11.4 PP IEC 6100042 Level 4 equivalent 8.0 I = 16 A (8 kV Contact, 15 kV Air) PP Dynamic Resistance R I/O Pin to GND 0.36 DYN GND to I/O Pin 0.44 Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins and GND 0.30 0.37 pF J R V = 0 V, f = 1 MHz between I/O Pins 0.15 0.20 R V = 0 V, f = 1 MHz, T = 65C between I/O Pins and GND 0.37 0.47 R A 1. For test procedure see Figures 3 and 4 and application note AND8307/D. 2. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 90 10 0 80 70 10 60 20 50 30 40 40 30 50 20 60 10 70 0 80 10 90 20 0 20 40 60 80 100 120 140 20 0 20 40 60 80 100 120 140 TIME (ns) TIME (ns) Figure 1. IEC6100042 +8 kV Contact Figure 2. IEC6100042 8 kV Contact Clamping Voltage Clamping Voltage www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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