ESD5381 Series ESD Protection Diode MicroPackaged Diodes for ESD Protection The ESD5381 series are designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that www.onsemi.com are exposed to ESD. Because of their small size, they are suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space comes at a premium. 1 2 Cathode Anode Specification Features Low Capacitance Low Clamping Voltage MARKING Small Body Outline Dimensions: 0.60 mm x 0.30 mm DIAGRAM Low Body Height: 0.3 mm PIN 1 Low Leakage X3DFN2 X M CASE 152AF Response Time is < 1 ns IEC6100042 Level 4 ESD Protection X = Specific Device Code IEC6100044 Level 4 EFT Protection M = Date Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS (Specific marking on following page) Compliant Mechanical Characteristics ORDERING INFORMATION QUALIFIED MAX REFLOW TEMPERATURE: 260C Device Meets MSL 1 Requirements Device Package Shipping ESD5381MUT5G X3DFN2 10000 / MAXIMUM RATINGS (PbFree) Tape & Reel Rating Symbol Value Unit ESD5382MUT5G X3DFN2 10000 / (PbFree) Tape & Reel IEC 6100042 (ESD) Contact 8 kV Air For information on tape and reel specifications, including part orientation and tape sizes, please Total Power Dissipation on FR5 Board P 300 mW D refer to our Tape and Reel Packaging Specifications (Note 1) T = 25C A Brochure, BRD8011/D. Thermal Resistance, JunctiontoAmbient R 400 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: September, 2017 Rev. 7 ESD5381/DESD5381 Series ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T *See Application Note AND8308/D for detailed explanations of I PP datasheet parameters. UniDirectional ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A V I (nA) V (V) I V (V) RWM R BR T C (V) V (Note 2) I = 1 A I C (pF) V RWM T PP C Max Per IEC6100042 Device Max Max Min mA Typ Max (Note 3) (Note 4) Device Marking ESD5381MUT5G J 3.0 100 6.1 1.0 12 13 10.5 Figures 1 and 2 See Below ESD5382MUT5G K 3.0 50 14.2 1.0 6 8 26.0 Figures 3 and 4 See Below Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. V is measured with a pulse test current I at an ambient temperature of 25C. BR T 3. Surge current waveforms per Figure 7. 4. For test procedure see Figures 5 and 6 and Application Note AND8307/D. www.onsemi.com 2