J ESD5482 ESD Protection Diode MicroPackaged Diodes for ESD Protection The ESD5482 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, this part is well suited for www.onsemi.com use in cellular phones, MP3 players, digital cameras and many other portable applications where board space comes at a premium. 1 2 Specification Features Cathode Anode Low Capacitance 5 pF Low Clamping Voltage MARKING Small Body Outline Dimensions: 0.60 mm x 0.30 mm DIAGRAM Low Body Height: 0.3 mm Standoff Voltage: 3.3 V PIN 1 X3DFN2 Low Leakage M CASE 152AF Response Time is < 1 ns IEC6100042 Level 4 ESD Protection J = Specific Device Code IEC6100044 Level 4 EFT Protection (Rotated 90 Clockwise) These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant ORDERING INFORMATION Mechanical Characteristics Device Package Shipping MOUNTING POSITION: Any ESD5482MUT5G X3DFN2 10000 / QUALIFIED MAX REFLOW TEMPERATURE: 260C (PbFree) Tape & Reel Device Meets MSL 1 Requirements For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications MAXIMUM RATINGS Brochure, BRD8011/D. Rating Symbol Value Unit IEC 6100042 (ESD) Contact 10 kV Air 10 Total Power Dissipation on FR5 Board P 300 mW D (Note 1) T = 25C A Thermal Resistance, JunctiontoAmbient R 400 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: September, 2017 Rev. 2 ESD5482/DESD5482 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T *See Application Note AND8308/D for detailed explanations of BiDirectional datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Parameter Symbol Condition Min Typ Max Unit Reverse Working Voltage V 3.3 V RWM Breakdown Voltage V I = 1 mA (Note 2) 5.0 V BR T Reverse Leakage Current I V = 3.3 V < 1 50 nA R RWM Clamping Voltage V I = 1 A (Note 3) 7.8 9.1 V C PP ESD Clamping Voltage V Per IEC6100042 See Figures 1 and 2 C Junction Capacitance C V = 0 V, f = 1 MHz 5.0 7.0 pF J R V = 0 V, f = 1 GHz 5.0 7.0 R Dynamic Resistance R TLP Pulse 0.60 DYN Insertion Loss f = 1 MHz 0.20 dB f = 8.5 GHz 0.56 2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 3. Nonrepetitive current pulse at 25C, per IEC6100045 waveform. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2