ESD5484FCT5G ESD Protection Diode MicroPackaged Diodes for ESD Protection The ESD5484 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to ESD. Because of its small size, it is suited for use in cellular www.onsemi.com phones, MP3 players, digital cameras and many other portable applications where board space comes at a premium. 1 2 Specification Features Cathode Anode Low Clamping Voltage Small Body Outline Dimensions: 0.60 mm x 0.30 mm MARKING Low Body Height: 0.3 mm DIAGRAM Standoff Voltage: 5.0 V PIN 1 Low Leakage WLCSP2 Response Time is < 1 ns B CASE 567AV IEC6100042 Level 4 ESD Protection IEC6100044 Level 4 EFT Protection B = Specific Device Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant ORDERING INFORMATION Mechanical Characteristics MOUNTING POSITION: Any Device Package Shipping QUALIFIED MAX REFLOW TEMPERATURE: 260C ESD5484FCT5G WLCSP2 10,000 / Device Meets MSL 1 Requirements (PbFree) Tape & Reel For information on tape and reel specifications, MAXIMUM RATINGS including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Rating Symbol Value Unit Brochure, BRD8011/D. IEC6100042 (ESD) Contact 30 kV Air 30 Total Power Dissipation on FR5 Board P 300 mW D (Note 1) T = 25C A Thermal Resistance, JunctiontoAmbient R 400 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: September, 2017 Rev. 3 ESD5484/DESD5484FCT5G ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T *See Application Note AND8308/D for detailed explanations of BiDirectional datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A V I ( A) V (V) I V (V) RWM BR T C R (V) V (Note 2) I C (pF) I V RWM PP T C Device Max Per IEC6100042 (Note 3) (Note 4) Marking Max Max Min mA Typ Max Device ESD5484FCT5G B 5.0 0.1 6.0 1.0 35 45 I =3 A Figures 1 and 2 PP 10.3 V, See Below I =5 A PP 11.3 V, I =7 A PP 11.5 V 2. V is measured with a pulse test current I at an ambient temperature of 25C. BR T 3. Surge current waveforms per Figure 5. 4. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2