ESD7504 ESD Protection Diode Low Capacitance ESD Protection Diode for High Speed Data Line The ESD7504 surge protection is designed to protect high speed www.onsemi.com data lines from ESD. Ultralow capacitance and low ESD clamping voltage make this device an ideal solution for protecting voltage sensitive high speed data lines. The flowthrough style package MARKING allows for easy PCB layout and matched trace lengths necessary to DIAGRAM maintain consistent impedance between high speed differential lines UDFN10 such as USB 3.0. 4E M CASE 517BB Features 4E = Specific Device Code (tbd) Low Capacitance (0.55 pF Max, I/O to GND) M = Date Code Protection for the Following IEC Standards: = PbFree Package IEC 6100042 (Level 4) (Note: Microdot may be in either location) Low ESD Clamping Voltage These Devices are PbFree, Halogen Free/BFR Free and are RoHS PIN CONFIGURATION Compliant AND SCHEMATIC Typical Applications N/C N/C GND N/C N/C USB 3.0 10 98 7 6 eSATA 1.0/2.0/3.0 HDMI 1.3/1.4 1423 5 Display Port I/O I/O GND I/O I/O MAXIMUM RATINGS (T = 25C unless otherwise noted) J I/O I/O I/O I/O Rating Symbol Value Unit Pin 1 Pin 2 Pin 4 Pin 5 Operating Junction Temperature Range T 55 to +125 C J Storage Temperature Range T 55 to +150 C stg Lead Solder Temperature T 260 C L Maximum (10 Seconds) IEC 6100042 Contact (ESD) ESD 15 kV IEC 6100042 Air (ESD) ESD 15 kV Pins 3, 8 Note: Common GND Only Minimum of 1 GND connection required Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. = ORDERING INFORMATION Device Package Shipping ESD7504MUTAG UDFN10 3000 / (PbFree) Tape & Reel See Application Note AND8308/D for further description of For information on tape and reel specifications, survivability specs. including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2017 Rev. 1 ESD7504/DESD7504 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Peak Pulse Current R PP DYN V Clamping Voltage I C PP V Working Peak Reverse Voltage V V V RWM CL BR RWM V I I Maximum Reverse Leakage Current V R V CL R RWM I T V Breakdown Voltage I BR T I Test Current R T DYN R Dynamic Resistance DYN *See Application Note AND8308/D for detailed explanations of I PP datasheet parameters. UniDirectional ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to GND 3.3 V RWM Breakdown Voltage V I = 1 mA, I/O Pin to GND 4.0 5.0 V BR T Reverse Leakage Current I V = 3.3 V, I/O Pin to GND 1.0 A R RWM Clamping Voltage V IEC6100042, 8 kV Contact See Figures 1 and 2 V C (Note 1) Clamping Voltage V V I = 8 A IEC 6100042 Level 2 equivalent 10.2 C PP TLP (Note 2) 4.5 I = 8 A (4 kV Contact, 4 kV Air) PP See Figures 5 through 6 I = 16 A 13.7 PP IEC 6100042 Level 4 equivalent 8.1 I = 16 A (8 kV Contact, 15 kV Air) PP Junction Capacitance C V = 0 V, f = 1 MHz between I/O Pins and GND 0.55 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. For test procedure see Figures 3 and 4 and application note AND8307/D. 2. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 90 10 80 0 70 10 60 20 50 30 40 40 30 50 20 60 10 70 0 80 10 90 20 0 20 40 60 80 100 120 140 20 0 20 40 60 80 100 120 140 TIME (ns) TIME (ns) Figure 1. IEC6100042 +8 kV Contact Figure 2. IEC6100042 8 kV Contact Clamping Voltage Clamping Voltage www.onsemi.com 2 VOLTAGE (V) VOLTAGE (V)