ESD7C, SZESD7C SERIES ESD Protection Diode MicroPackaged Diodes for ESD Protection The ESD7CxxD Series is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time make these parts ideal for ESD protection on designs www.onsemi.com where board space is at a premium. Because of its small size, it is suited for use in cellular phones, portable devices, digital cameras, power 1 PIN 1. CATHODE supplies and many other portable applications. 3 2. CATHODE 3. ANODE 2 Specification Features: Low Capacitance 6.2 pF to 13 pF Low Clamping Voltage MARKING Small Body Outline Dimensions: DIAGRAM 0.047 x 0.047 (1.20 mm x 1.20 mm) Low Body Height: 0.020 (0.5 mm) L5 M Standoff Voltage: 3.3 V, 5 V SOT723 Low Leakage 1 CASE 631AA Response Time < 1 ns L5 = Specific Device Code ESD Rating of Class 3 (> 16 kV) per Human Body Model M = Date Code IEC6100042 Level 4 ESD Protection *Date Code orientation and/or position may SZ Prefix for Automotive and Other Applications Requiring Unique vary depending upon manufacturing location. Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These are PbFree Devices ORDERING INFORMATION Mechanical Characteristics: Device Package Shipping CASE: Void-free, transfer-molded, thermosetting plastic ESD7CxxDT5G SOT723 8000 / Epoxy Meets UL 94 V0 (PbFree) Tape & Reel LEAD FINISH: 100% Matte Sn (Tin) SZESD7CxxDT5G SOT723 8000 / MOUNTING POSITION: Any (PbFree) Tape & Reel QUALIFIED MAX REFLOW TEMPERATURE: 260C Device Meets MSL 1 Requirements For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications MAXIMUM RATINGS Brochure, BRD8011/D. Rating Symbol Value Unit IEC 6100042 (ESD) Contact 8.0 kV Air 15 DEVICE MARKING INFORMATION See specific marking information in the device marking Total Power Dissipation on FR5 Board column of the table on page 2 of this data sheet. (Note 1) T = 25C P 240 mW A D Derate above 25C 1.9 mW/C 525 Thermal Resistance JunctiontoAmbient R C/W JA Junction and Storage Temperature Range T , T 55 to C J stg +150 Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: November, 2017 Rev. 4 ESD7C3.3D/DESD7C, SZESD7C SERIES ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V Working Peak Reverse Voltage RWM I Maximum Reverse Leakage Current V V V V C BR RWM R RWM V I V R F V Breakdown Voltage I BR T I T I Test Current T I Forward Current F V Forward Voltage I F F P Peak Power Dissipation pk I PP C Max. Capacitance V = 0 and f = 1 MHz R *See Application Note AND8308/D for detailed explanations of UniDirectional datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted, V = 1.1 V Max. I = 10 mA) A F F V (V) I C (pF) C (pF) BR T V (V) I ( A) V (Note 3) I (Note 4) (Note 4) V RWM R RWM T C Per IEC6100042 Device Marking Max Max Min mA Typ Max (Note 5) Device (Note 2) Figures 1 and 2 ESD7C3.3DT5G L5 3.3 1.0 5.0 1.0 12 13 See Below ESD7C5.0DT5G L4 5.0 0.5 11 1.0 6.0 6.2 (Note 6) 2. Include SZprefix devices where applicable. 3. V is measured with a pulse test current I at an ambient temperature of 25C. BR T 4. Capacitance of one diode at f = 1 MHz, V = 0 V, T = 25C. R A 5. For test procedure see Figures 3 and 4 and Application Note AND8307/D. 6. ESD7C5.0DT5G shown below. Other voltages available upon request. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2