ESD Protection Diode MicroPackaged Diodes for ESD Protection ESD7551, SZESD7551 The ESD7551 is designed to protect voltage sensitive components that require ultralow capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on www.onsemi.com designs where board space is at a premium. Because of its low capacitance, the part is well suited for use in high frequency designs such as USB 2.0 high speed and antenna line applications. 1 2 Cathode Anode Features UltraLow Capacitance (0.35 pF Max) Low Clamping Voltage MARKING Standoff Voltage: 3.3 V DIAGRAM Low Leakage X2DFN2 E M Response Time is < 1 ns CASE 714AB Low Dynamic Resistance < 1 Protection for the Following Standards: E = Specific Device Code IEC 6100042 (Level 4) & ISO 10605 M = Date Code SZESD7551MXWT5G Wettable Flank Package for Optimal Automated Optical Inspection (AOI) X2DFNW2 SZ Prefix for Automotive and Other Applications Requiring Unique F M CASE 711BG Site and Control Change Requirements AECQ101 Qualified and PPAP Capable F = Specific Device Code These Devices are PbFree, Halogen Free/BFR Free and are RoHS M = Date Code Compliant Typical Applications RF Signal ESD Protection ORDERING INFORMATION RF Switching, PA, and Antenna ESD Protection Device Package Shipping Near Field Communications ESD7551N2T5G X2DFN2 8000 / Tape & (PbFree) Reel MAXIMUM RATINGS SZESD7551N2T5G X2DFN2 8000 / Tape & Rating Symbol Value Unit (PbFree) Reel Total Power Dissipation on FR5 Board P 250 mW D SZESD7551MXWT5G X2DFNW2 8000 / Tape & (Note 1) T = 25C A Thermal Resistance, JunctiontoAmbient 400 C/W R (PbFree) Reel JA Junction and Storage Temperature Range T , T 55 to +150 C For information on tape and reel specifications, J stg including part orientation and tape sizes, please Lead Solder Temperature Maximum T 260 C L refer to our Tape and Reel Packaging Specifications (10 Second Duration) Brochure, BRD8011/D. IEC 6100042 Contact ESD 25 kV IEC 6100042 Air 25 ISO 10605 150 pF/2 k 30 ISO 10605 330 pF/2 k 30 ISO 10605 330 pF/330 20 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: April, 2020 Rev. 3 ESD7551/DESD7551, SZESD7551 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current PP I T I V Clamping Voltage I V V V R C PP C BR RWM V I V V V R RWM BR C V Working Peak Reverse Voltage RWM I T I Maximum Reverse Leakage Current V R RWM V Breakdown Voltage I BR T I PP I Test Current T BiDirectional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V 3.3 V RWM Breakdown Voltage (Note 2) V I = 1 mA 5.0 6.0 7.5 V BR T Reverse Leakage Current I V = 3.3 V < 1.0 50 nA R RWM Clamping Voltage (Note 3) V I = 1 A 10 V C PP Clamping Voltage (Note 3) V I = 3 A 13 V C PP ESD Clamping Voltage V Per IEC6100042 C Junction Capacitance C V = 0 V, f = 1 MHz 0.25 0.35 pF J R V = 0 V, f = 1 GHz 0.22 0.35 R Dynamic Resistance R TLP Pulse 0.55 DYN 2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 3. Nonrepetitive current pulse at T = 25C, per IEC6100045 waveform. A www.onsemi.com 2