ESDARF03-1BF3 STMicroelectronics

ESDARF03-1BF3 Ultralow capacitance ESD protection for antenna Features ultralow diode capacitance 0.6 pF Single line, protected against 15 kV ESD breakdown voltage V = 6.0 V min. BR Flip Chip 400 m pitch, lead-free Flip Chip very low leakage current (4 bumps) very small PCB area RoHS compliant Figure 1. Pin layout (bump side) Benefits A B minimized impact on rise and fall times for maximum data integrity 1 low PCB space occupation higher reliability through monolithic integration 2 Complies with the following standards IEC 61000-4-2 level 4: Figure 2. Device configuration 15 kV (air discharge) 8 kV (contact discharge) A1 (RF ) B1 (NC) IN MIL STD 883G - Method 3015.7: 25 kV (human body model) A1 Applications B1 50 line B2 A2 antenna protection DVB - H GPS Top view B2 (NC) A2 (GND) Description Note: Bumps B1 and B2 must be connected The ESDARF03-1BF3 is a monolithic, application together on the PCB. specific discrete device dedicated to ESD protection of antennas. Its ultralow line capacitance secures a high level of signal integrity without compromising the protection of sensitive chips against the most stringently characterized ESD strikes. TM: IPAD is a trademark of STMicroelectronics. November 2010 Doc ID 16078 Rev 1 1/7 www.st.com 7 Obsolete Product(s) - Obsolete Product(s)Characteristics ESDARF03-1BF3 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit ESD discharge IEC 61000-4-2, air discharge 15 V kV PP ESD discharge IEC 61000-4-2, contact discharge 8 P Peak pulse power dissipation (8/20 s) 60 W PP T Maximum junction temperature 125 C j T Operating temperature range -30 to + 85 C op T Storage temperature range -55 to +150 C stg Figure 3. Electrical characteristics (definitions) Symbol Parameter V = Breakdown voltage BR I = Leakage current V RM RM V = Stand-off voltage RM V = Clamping voltage CL R = Dynamic impedance d I = Peak pulse current pp T = Voltage temperature coefficient V = Line capacitance F Table 2. Electrical characteristics (T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6 9 V BR R I V = 3 V 100 nA RM RM R Exponential wave form 8/20 s, I = 1 to 5 A 2.6 d pp -4 TI = 1 mA 5 10 / C R C V = 0 V, V = 30 mV, F = 1 MHz 0.6 0.8 pF line LINE OSC 2/7 Doc ID 16078 Rev 1 Obsolete Product(s) - Obsolete Product(s)