UDZUTE-175.6B ROHM

Data Sheet Low capacitance ESD Protection Diode UDZU5.6B lApplications lDimensions (Unit : mm) lLand size figure (Unit : mm) ESD Protection 1.250.1 0.10.1 0.05 0.9MIN. lFeatures 1)Small mold type. (UMD2) 2)Low Capacitance 3)By chip-mouter,automatic mouting is possible. UMD2 lConstruction lStructure 0.70.2 Silicon epitaxial planer 0.30.05 0.1 ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-901A dot (year week factory) lTaping dimensions (Unit : mm) lAbsolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Power dissipation P 200 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Operation temperature Topr -55 to +150 C lElectrical characteristics (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Conditions V I =5mA Zener voltage 5.49 - 5.73 V Z Z Reverse current I - - 1.0 A V =2.5V R R f=1MHz,V =0V Capacitance between terminals C - 8.0 - pF t R *Zener voltage(Vz) shall be measured at 40ms after loading current. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.11 - Rev.A 1/3 1.70.1 2.50.2 0.8MIN. 2.1Data Sheet UDZU5.6B 10 10000 Ta=150 C Ta=25 C 1000 Ta=125 C Ta=125 C 1 100 Ta= -25 C Ta=75 C 10 0.1 Ta=75 C 1 Ta=25 C 0.01 0.1 5 5.5 6 6.5 0 1 2 3 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGEV (V) R Vz-Iz CHARACTERISTICS V -I CHARACTERISTICS R R 10 100 f=1MHz Ta=25 C 9 I =5mA Z 8 n=30pcs 7 6 10 5 AVE:5.59V 4 3 2 1 1 0 0 1 2 3 4 5 Vz DISPERSION MAP REVERSE VOLTAGE:V (V) R V -Ct CHARACTERISTICS R 140 20 Ta=25 C Ta=25 C 18 120 f=1MHz V =2.5V R V =0V 16 R n=30pcs n=10pcs 100 14 AVE:118.29pA 12 80 10 60 8 AVE:9.4pF 6 40 4 20 2 0 0 Ct DISPERSION MAP I DISPERSION MAP R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.11 - Rev.A 2/3 CAPACITANCE BETWEEN REVERSE CURRENT:I (pA) ZENER CURRENT:Iz(mA) R TERMINALS:Ct(pF) CAPACITANCE REVERSE CURRENT:I (pA) ZENER VOLTAGE:Vz(V) R BETWEEN TERMINALS:Ct(pF)