EMIF08-LCD04M16 STMicroelectronics

EMIF08-LCD04M16 8-line L-C IPAD, EMI filter and ESD protection in Micro QFN Features High cut off frequency low-pass filter: F = 400 MHz at -6 dB C High efficiency in EMI filtering: better than -35 dB from 900 MHz to 2 GHz Very low PCB space consuming with plastic Micro QFN micro-package 3.3 x 1.35 mm 3.3 x 1.35 16L Very thin package: 0.55 mm High efficiency in ESD (IEC 61000-4-2 level 4) Figure 1. Device configuration High reliability offered by monolithic integration Low-pass Filter High reducing of parasitic elements through 0 0 0 0 integration Input Output ECOPACK 2 compliant component Complies with the following standards IEC 61000-4-2 level 4: GND GND GND 15 kV (air discharge) 8 kV (contact discharge) Description Applications The EMIF08-LCD04M16 is a 8-line inductor- Where EMI filtering in ESD sensitive equipment is capacitor (LC) EMI filter designed to suppress required: EMI/RFI noise in all systems subjected to electromagnetic interferences requiring a large LCD and camera for mobile phones bandwidth. Computers and printers This filter includes an ESD protection circuitry, Communication systems which prevents damage to the application when MCU boards subjected to ESD surges up 15 kV contact discharge. TM: IPAD is a trademark of STMicroelectronics. November 2009 Doc ID 15673 Rev 2 1/10 www.st.com 10 Electrical characteristics EMIF08-LCD04M16 1 Electrical characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit V ESD discharge IEC 61000-4-2, contact discharge 15 kV PP T Operating temperature range -40 to 85 C op T Maximum junction temperature 125 C j T Storage temperature range -55 to 150 C stg Figure 2. Electrical characteristics (definitions) II Symbol Parameter II FF V = Breakdown voltage BR I = Leakage current V RM RM V = Stand-off voltage RM V = Clamping voltage VV CL VV VV VV CLCL BRBR RMRM R = Dynamic impedance d II RMRM I = Peak pulse current PP II RR I = Breakdown current R T = Voltage temperature coefficient V = Forward voltage drop F II PPPP Table 2. Electrical characteristics (T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6 - - V BR R I V = 3 V per line - - 100 nA RM RM L Inductance - 12 - nH C V = 3 V DC, F = 1 MHz, V = 30 mV 17 18 19 pF line R osc R Parasitic resistance of the inductance 9 12.5 20 F 50 source and 50 load termination at -6 dB - 400 - MHz C 2/10 Doc ID 15673 Rev 2