EMIF03-SIM03F3 3-line IPAD, EMI filter including ESD protection Features EMI symmetrical (I/O) low-pass filter high efficiency in EMI/ESD protection lead-free package very thin package high reliability offered by monolithic integration Lead-free Flip-Chip package (8 bumps) high reduction of parasitic elements through integration and wafer level packaging Figure 1. Pin configuration (bump side) Complies with the following standards 3 2 1 IEC 61000-4-2 level 4: 15 kV (air discharge) RST RST A ext in 8 kV (contact discharge) IEC 61000-4-2 level 1: CLK CLK 2 kV (air discharge) GND B in ext 2 kV (contact discharge) ETSI 102.221 (configuration FIDI = 97) Data Data Vcc C ext in Applications Where EMI filtering in ESD sensitive equipment is Figure 2. Configuration required: C2 mobile phones and communication systems 100 computers, printers and MCU Boards A3 A2 R1 47 B3 B1 R2 Description 100 C3 C1 R3 The EMIF03-SIM03F3 chip is a very low capacitance EMI filter designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interference. B2 GND This filter includes ESD protection circuitry, which prevents damage to the protected device when subjected to ESD surges up to 15 kV. TM: IPAD is a trademark of STMicroelectronics. October 2010 Doc ID 16798 Rev 2 1/8 www.st.com 8Electrical characteristics EMIF03-SIM03F3 1 Electrical characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit Internal pins (A3, B3, C3): 2 ESD discharge IEC 61000-4-2, level 1, air discharge ESD discharge IEC 61000-4-2, level 1, contact discharge 2 V kV PP External pins (A2, B1, C1, C2): ESD discharge IEC 61000-4-2, level 4, air discharge 15 ESD discharge IEC 61000-4-2, level 4, contact discharge 8 P Line resistance power dissipation at 70 C 60 mW d T Operating temperature range - 40 to + 85 C op T Storage temperature range - 55 to 150 C stg Figure 3. Electrical characteristics - definitions I Symbol Parameter V = Breakdown voltage BR I = Leakage current V RM RM IR V = Stand-off voltage RM IRM VBR VRM V C = Line capacitance IRM line VRM VBR IR Table 2. Electrical characteristics - values (T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 14 V BR R I V = 3 V per line 50 200 nA RM RM R R Tolerance 20% 80 100 120 1, 3 R Tolerance 20% 37.6 47 56.4 2 V = 0 V, V = 30 mV, F = 1 MHz line osc C 810 12 pF line (measured under zero light conditions) 2/8 Doc ID 16798 Rev 2