EMIF02-1003M6 STMicroelectronics

EMIF02-1003M6 2 line IPAD, EMI filter and ESD protection in Micro QFN package Features Dual line EMI symmetrical (I/O) low-pass filter High efficiency in EMI filtering Very low PCB space consumption: 1.0 mm x 1.45 mm Very thin package: 0.6 mm max Micro QFN 1.45 mm x 1.00 mm High efficiency in ESD suppression (bottom view) (IEC 61000-4-2 level 4). High reliability offered by monolithic integration High reduction of parasitic elements through Figure 1. Pin configuration (top view) integration and wafer level packaging. Lead free package Easy layout and flexibility due to single line topology Low capacitance 1 6 OUT IN Complies with following standards 2 GND 5 GND IEC 61000-4-2 level 4, input and output pins 15 kV (air discharge) IN 3 4 OUT 8 kV (contact discharge) MIL STD 883G - Method 3015-7 Class 3B (all pins) Applications Figure 2. Basic cell configuration Where EMI filtering in ESD sensitive equipment is required: Keyboard for mobile phones Input Output Computers and printers R = 100 Communication systems C = 30 pF typ. 0 V LINE MCU Boards Description The EMIF02-1003M6 is a 2 line highly integrated device designed to suppress EMI/RFI noise in all systems exposed to electromagnetic interference. This filter includes ESD protection circuitry, which prevents damage to the application when TM: IPAD is a trademark of STMicroelectronics subjected to ESD surges up to 15 kV on all pins. October 2007 Rev 1 1/10 www.st.comCharacteristics EMIF02-1003M6 1 Characteristics Table 1. Absolute ratings (limiting values at T = 25 C unless otherwise specified) amb Symbol Parameter Value Unit ESD discharge IEC61000-4-2 air discharge on input and output pins 15 V kV PP ESD discharge IEC61000-4-2 contact discharge on input and output pins 8 T Junction temperature 125 C j T Operating temperature range -40 to + 85 C op T Storage temperature range -55 to +150 C stg Table 2. Electrical characteristics (T = 25 C) amb Symbol Parameter I V Breakdown voltage BR I F I Leakage current V RM RM V Stand-off voltage RM V BR VF V VCL RM V V Clamping voltage CL I RM I R R Dynamic resistance d I Peak pulse current PP I PP R Series resistance between Input & Output I/O C Input capacitance per line line Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 5 6.5 8 V BR R I V = 3 V per line 100 nA RM RM R Tolerance 10% 100 I/O C V = 0 V , V = 30 mV, F = 1 MHz 30 39 pF line R DC OSC S21 F = 900 MHz -26 dB 2/10