EMIF02-MIC03M6 STMicroelectronics

EMIF02-MIC03M6 2-line IPAD, EMI filter and ESD protection for microphone Features Pin 1 EMI symmetrical (I/O) low-pass filter High efficiency in EMI filtering Very low PCB space consumption: 1.0 mm x 1.45 mm Very thin package: 0.6 mm max Micro QFN 6 leads 1.45 mm x 1.00 mm High efficiency in ESD suppression (bottom view) High reliability offered by monolithic integration High reduction of parasitic elements through integration and wafer level packaging Figure 1. Pin configuration (top view) Lead-free and halogen-free package Complies with following standards IEC 61000-4-2 level 4, input and output pins MIC 1 6 MIC R in R out IEC 61000-4-2 level 4 requirements 8 kV (contact discharge) GND 2 GND 5 or 15 kV (air discharge) MIC MIC 3 4 L in L out Application Mobile phones Description Figure 2. Basic cell configuration The EMIF02-MIC03M6 is a 2-line highly Low-pass filter integrated device designed to suppress EMI/RFI noise in all systems exposed to electromagnetic Input Output interference. This filter includes ESD protection circuitry, which prevents damage to the application when subjected to ESD surges up to 8 kV on all pins. GND GND GND R = 68, C = 45 pF typ. line TM: IPAD is a trademark of STMicroelectronics May 2011 Doc ID 14448 Rev 2 1/11 www.st.com 11Characteristics EMIF02-MIC03M6 1 Characteristics (1) Table 1. Absolute ratings Symbol Parameter Value Unit ESD discharge IEC61000-4-2 contact discharge 8 V kV (2) PP ESD discharge IEC61000-4-2 air discharge 15 T Junction temperature 125 C j T Operating temperature range -40 to + 85 C op T Storage temperature range -55 to +150 C stg 1. limiting values at T = 25 C unless otherwise specified amb 2. According to IEC61000-4-2 test conditions with ungrounded table top equipment set-up, PCB board on insulated plane 2 (dimensions 25 x 25 mm ), 2 serial resistors of 470 k to GND reference plane Table 2. Electrical characteristics (T = 25 C) amb Symbol Parameter I V Breakdown voltage BR IPP I Leakage current V RM RM V Stand-off voltage RM IR VCL IRM VBR VRM V V Clamping voltage CL IRM VRM VBR VCL IR R Dynamic resistance d I Peak pulse current PP IPP R Series resistance between Input & Output I/O C Input capacitance per line line Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6 8 V BR R I V = 3 V per line 500 nA RM RM R Tolerance 20% 68 I/O (1) C V = 0 V, F = 1 MHz, V = 30 mV 45 pF line R OSC 1. Tolerance 20% 2/11 Doc ID 14448 Rev 2