EMIF03-SIM01F2 STMicroelectronics

EMIF03-SIM01F2 3-line IPAD, EMI filter including ESD protection Features EMI symmetrical (I/O) low-pass filter High efficiency in EMI filtering Lead-free package Very low PCB space occupation: 1.42 mm x 1.42 mm Flip Chip Very thin package: 0.65 mm (8 bumps) High efficiency in ESD suppression High reliability offered by monolithic integration Figure 1. Pin layout (bump side) High reduction of parasitic elements through 3 2 1 integration and wafer level packaging RST RST A in out Complies with the following standards CLT CLT Gnd IEC 61000-4-2 level 4 on input pins B in out 15 kV (air discharge) Data Data VCC C 8 kV (contact discharge) in out MIL SRD 883E - Method 3015-6 Class 3 Figure 2. Configuration Applications VCC EMI filtering and ESD protection for: 100 RST in RST out SIM interface (subscriber identity module) R1 47 CLK in CLK out R2 UIM interface (universal identity module) 100 Data in Data out R3 Description Cline = 35pF max. The EMIF03-SIM01F2 is a highly integrated GND device designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interference. The EMIF03 Flip Chip packaging means the package size is equal to the die size. This filter includes ESD protection circuitry which prevents damage to the application when subjected to ESD surges up 15 kV. TM: IPAD is a trademark of STMicroelectronics. April 2008 Rev 3 1/7 www.st.com 7Characteristics EMIF03-SIM01F2 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol Parameter Value Unit T Maximum junction temperature 125 C j T Operating temperature range -40 to +85 C op T Storage temperature range -55 to 150 C stg Table 2. Electrical characteristics (T = 25 C) amb Symbol Parameters I V Breakdown voltage BR IF I Leakage current V RM RM V Stand-off voltage RM V Clamping voltage VF CL VCL VBR VRM V IRM R Dynamic impedance d IR I Peak pulse current PP Series resistance between input and R IPP I/O output C Input capacitance per line line Symbol Test conditions Min Typ Max Unit V I = 1 mA 6 V BR R I V = 3 V per line 1 A RM RM R 1.5 d R 95 100 105 1 R 44.65 47 49.35 2 R 95 100 105 3 C 0 V 35 pF line 2/7