EMIF03-SIM02M8 STMicroelectronics

EMIF03-SIM02M8 3 line IPAD, EMI filter for SIM card applications Features 11 8 SIM card EMI low-pass filter 7 2 GND High efficiency in EMI filtering GND 6 3 Very low PCB space consumption: 1.7 mm x 1.5 mm 5 4 Very thin package: 0.6 mm max Micro QFN 1.7 mm x 1.5 mm High efficiency in ESD suppression on external (bottom view) pins (IEC 61000-4-2 level 4). High reliability offered by monolithic integration Figure 1. Pin configuration (top view) High reduction of parasitic elements through integration and wafer level packaging. Vcc Vcc Lead free package RST in RST Easy layout and flexibility thanks to I/O EXT topology CLK CLK in EXT Low clamping voltage Data in Data EXT Complies with following standards IEC 61000-4-2 level 4 external pins Figure 2. Device configuration 15 kV (air discharge) Vcc 100 8 kV (contact discharge) RST in RST ext R1 IEC 61000-4-2 level 2 internal pins 47 CLK in CLK ext 2 kV (air discharge) R2 100 2 kV (contact discharge) Data in Data ext R3 MIL STD 883G - Method 3015-7 Class 3A (all pins) Applications GND Maximum line capacitance = 20 pF Where EMI filtering in ESD sensitive equipment is required: Description Keyboard for mobile phones The EMIF03-SIM02M8 is a 3 line highly Computers and printers integrated device designed to suppress EMI/RFI Communication systems noise in all systems exposed to electromagnetic interference. MCU boards This filter includes ESD protection circuitry, which prevents damage to the application when subjected to ESD surges up to 15 kV on the external pins. TM: IPAD is a trademark of STMicroelectronics October 2007 Rev 1 1/10 www.st.com GNDCharacteristics EMIF03-SIM02M8 1 Characteristics Table 1. Absolute ratings (limiting values at T = 25 C unless otherwise specified) amb Symbol Parameter Value Unit Internal pins ESD discharge IEC 61000-4-2 air discharge 2 ESD discharge IEC 61000-4-2 contact discharge 2 External pins and V CC V kV PP ESD discharge IEC 61000-4-2 air discharge 15 ESD discharge IEC 61000-4-2 contact discharge 8 All pins MIL STD 883G - Method 3015-7 Class 3A (human body model) 4 T Junction temperature 125 C j T Operating temperature range -40 to + 85 C op T Storage temperature range -55 to +150 C stg Table 2. Electrical characteristics (T = 25 C) amb Symbol Parameter I I F V Breakdown voltage BR I Leakage current V RM RM V Stand-off voltage V BR RM V F VCL VRM V IRM V Clamping voltage CL I R I Peak pulse current PP R Series resistance between input and output I/O IPP C Input capacitance per line line Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6 7.9 V BR R I V = 3 V 0.2 A RM RM R , R Tolerance 20% 100 1 3 R Tolerance 20% 47 2 C V = 0 V, F = 1 MHz, V = 30 mV 17 20 pF line R OSC 2/10