EMIF03-SIM05F3 STMicroelectronics

EMIF03-SIM05F3 EMI filter with SWP protection for SIM interface Datasheet production data Features Lead-free package Very low PCB space consumption Very thin package: < 0.55 mm after reflow High efficiency in ESD suppression IEC6 1000-4-2 level 4 High reliability offered by monolithic integration WLCSP package (9 bumps) High reduction of parasitic elements through integration and WLCSP packaging Complies with the following standards: Figure 1. Pin configuration (bump side) IEC 61000-4-2 level 4 15 kV (air discharge) 8 kV (contact discharge) SWP Application Mobile phones Description The EMIF03-SIM05F3 is a highly integrated device designed to protect SIM interface and SWP line against ESD transients and EMI emission. The device is the ideal fit for applications using Figure 2. Functional schematic NFC. November 2012 Doc ID 023284 Rev 1 1/9 This is information on a product in full production. www.st.com 9Characteristics EMIF03-SIM05F3 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit Internal pins (A3, B3, C3): (1) ESD discharge IEC 61000-4-2 , level 1 2 Air discharge Contact discharge 2 V kV PP External pins (A1, A2, B1, C1, C2): ESD discharge IEC 61000-4-2, level 4 Air discharge 16 Contact discharge 16 T Maximum junction temperature 150 j T Operating temperature range - 30 to + 85 C op T Storage temperature range - 55 to 150 stg 1. Measurements done on IEC 61000-4-2 test bench. For further details see Application note AN3353, IEC 61000-4-2 standard testing. Figure 3. Electrical characteristics (definitions) I Symbol Parameter V = Breakdown voltage BR I = Leakage current V RM RM V = Stand-off voltage V V V RM CL BR RM V V = Clamping voltage I CL RM I = Peak pulse current PP I PP Table 2. Electrical characteristics (T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit I V = 3 V 100 nA RM RM V I = 1 mA 6 V BR R R1 R3 RST, DATA serial resistor 100 , R2 CLK serial resistor 47 Line capacitance on RST, DATA, CLK lines C 12 pF V = 0 V, V = 30 mV, F = 1 MHz line line osc (measured under zero light conditions) Line capacitance on SWP line C 23 pF V = 0 V, V = 30 mV, F = 1 MHz SWP line osc (measured under zero light conditions) 2/9 Doc ID 023284 Rev 1