EMIF06-1005M12 STMicroelectronics

EMIF06-1005M12 6-line IPAD low capacitance EMI filter and ESD protection in micro QFN package Features 12 1 EMI symmetrical (I/O) low-pass filter 11 2 High efficiency in EMI filtering: -34 dB at 10 3 GND frequencies from 900 MHz to 1.8 GHz 9 4 Very low PCB space consumption: 8 5 2.5 mm x 1.5 mm 7 6 Very thin package: 0.6 mm max Micro QFN 2.5 mm x 1.5 mm High efficiency in ESD suppression on inputs (bottom view) pins (IEC 61000-4-2 level 4) High reliability offered by monolithic integration Figure 1. Pin configuration (top view) High reduction of parasitic elements through 1 Input Output 12 integration and wafer level packaging Lead-free package 2 Input Output 11 Complies with following standards: 3 Input Output 10 IEC 61000-4-2 level 4 input and output pins 15 kV (air discharge) 4 Input Output 9 8 kV (contact discharge) MIL STD 883G - Method 3015-7 Class 3B 5 Input Output 8 (all pins) 6 Input Output 7 Applications Where EMI filtering in ESD sensitive equipment is required: Figure 2. Basic cell configuration LCD and camera for mobile phones 100 Computers and printers Input Output Communication systems MCU boards Description Typical line capacitance = 45 pF 0 V EMIF06-1005M12 is a 6-line, highly integrated device designed to suppress EMI/RFI noise in all systems exposed to electromagnetic interference. This filter includes ESD protection circuitry, which prevents damage to the application when subjected to ESD surges up to 15 kV on the input TM: IPAD is a trademark of STMicroelectronics pins. February 2008 Rev 3 1/10 www.st.comCharacteristics EMIF06-1005M12 1 Characteristics Table 1. Absolute ratings (limiting values at T = 25 C unless otherwise specified) amb Symbol Parameter Value Unit ESD IEC 61000-4-2, air discharge 15 V kV PP ESD IEC 61000-4-2, contact discharge 15 T Junction temperature 125 C j T Operating temperature range -40 to + 85 C op T Storage temperature range -55 to +150 C stg Table 2. Electrical characteristics (T = 25 C) amb Symbol Parameter I V Breakdown voltage BR IF I Leakage current V RM RM V Stand-off voltage RM V BR VF V V V Clamping voltage CL RM CL V IRM I R R Dynamic resistance d I Peak pulse current PP R Series resistance between Input & Output I/O I PP C Input capacitance per line line Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6 8 10 V BR R V I = 10 mA 0.5 1.0 1.5 F F I V = 3 V per line 200 nA RM RM R Tolerance 10% 90 100 110 I/O C V = 0 V dc, V = 30 mV, F = 1 MHz 38 45 52 pF line LINE OSC Figure 3. S21 attenuation measurement Figure 4. Analog cross talk measurements dB dB 0.00 0.00 - 10.00 - 20.00 -10.00 - 30.00 - 40.00 -20.00 - 50.00 - 60.00 - 70.00 -30.00 - 80.00 - 90.00 F (Hz) F (Hz) -40.00 - 100.00 100.0k 1.0M 10.0M 100.0M 1.0G 1.0M 3.0M 10.0M 30.0M 100.0M 300.0M 1.0G 3.0G 2/10