EMIF06-HMC02F2 6-line IPAD, EMI filter including ESD protection Datasheet - production data Description The EMIF06-HMC02F2 is a highly integrated array designed to suppress EMI / RFI noise for High Speed MultiMediaCard port filtering. The EMIF06-HMC02F2 Flip-Chip packaging means the package size is equal to the die size. Additionally, this filter includes an ESD protection circuitry which prevents the protected device from destruction when subjected to ESD surges up to )OLS &KLS SDFNDJH 15 kV. Compared to EMIF06-HMC01F2, the EXPSV EMIF06-HMC02F2 has its ground balls connected together internally. Figure 1. Pin configuration (ball side) Features 6 lines low-pass-filter % High efficiency in EMI filtering & Very low PCB space consuming: < 4 mm Lead-free package Very thin package: 0.65 mm Figure 2. Basic cell configuration 5 High efficiency in ESD suppression High reliability offered by monolithic integration 5 High reducing of parasitic elements through N FO N 5 G FP G 5 GD W integration and wafer level packaging 5 00&GD W GD W 5 GD W 5 00&GD W GD W Complies with the following standards IEC 61000-4-2 level 4 on external pins 15 kV (air discharge) Table 1. Ball configuration 8 kV (contact discharge) A1 cmd C1 dat2 MIL STD 883E - Method 3015-6 Class 3 A2 clk C2 gnd A3 Vmmc/Vdd C3 MMCdat1 A4 MMCclk C4 MMCdat0 Applications B1 dat1 D1 dat3 High Speed MultiMediaCard B2 dat0 D2 gnd B3 gnd D3 MMCdat3 B4 MMCcmd D4 MMCdat2 TM: IPAD is a trademark of STMicroelectronics. March 2016 DocID028878 Rev 1 1/7 This is information on a product in full production. www.st.com *1 W 00&GD W 00&GD 00&FP 00&FO 9PPF 9PPF 5 5 5 5 Electrical characteristics EMIF06-HMC02F2 1 Electrical characteristics Table 2. Absolute maximum ratings (T = 25 C) amb Symbol Parameter and test conditions Value Unit Internal pins (A4, B4, C3, C4, D3, D4): ESD discharge IEC61000-4-2, air discharge 2 ESD discharge IEC61000-4-2, contact discharge 2 V kV PP External pins (A1, A2, A3, B1, B2, C1, D1): ESD discharge IEC61000-4-2, air discharge 15 8 ESD discharge IEC61000-4-2, contact discharge T Maximum junction temperature 125 C j T Operating temperature range - 40 to + 85 C op T Storage temperature range - 55 to + 150 C stg Figure 3. Electrical characteristics (definitions) 6 PERO PHWHU UD 3D 9 OWDJH ZQ YR %UHDNGR %5 9 I YROWDJH 6WDQG RI 50 9 9 %5 50 , /HDNDJH FXUUHQW 50 , 9 50 50 9 %5 /LQH FDSDFLWDQFH & OLQH Table 3. Electrical characteristics (T = 25 C) amb Symbol Test conditions Tolerance Min. Typ. Max. Unit V I = 1 mA 6 V BR R I V = 3 V 0.1 A RM RM V = 0 V, V = 30 mV, BIAS OSC C 20 pF line f = 1 MHz R R R 2, 3, 4, I = 50 mA 20% 50 R R R 5, 6, 7 R R 10, 11, I = 50 A 30% 75 k R R 12, 13 R I = 200 A 30% 7 k 14 2/7 DocID028878 Rev 1