EMIF06-10006C2 STMicroelectronics

EMIF06-10006C2 IPAD 6 line EMI filter and ESD protection Main product characteristics Where EMI filtering in ESD sensitive equipment is required: Mobile phones and communication systems Computers, printers and MCU Boards Description Flip-Chip The EMIF06-10006C2 is a highly integrated (15 Bumps) device designed to suppress EMI/RFI noise in all systems subjected to electromagnetic interference. The EMIF06 Flip-Chip packaging means the package size is equal to the die size. Order Code This filter includes an ESD protection circuitry which prevents damage to the application when Part Number Marking subjected to ESD surges up 15 kV. This device includes 6 EMIF filters. EMIF06-10006C2 FT Benefits Figure 1. Pin Configuration (bump side) EMI symmetrical (I/O) low-pass filter High efficiency in EMI filtering 98 7 6 5 4 32 1 Lead free coated package I6 I5 I4 I3 I2 I1 A Very low PCB space consumption 2.92 mm x 1.29 mm B Gnd Gnd Gnd Very thin package: 0.695 mm O6 O5 O4 O3 O2 O1 C High efficiency in ESD suppression (IEC 61000-4-2 level 4) High reliability offered by monolithic integration High reduction of parasitic elements through Complies with the following standards: integration and wafer level packaging IEC 61000-4-2 level 4: 15 kV (air discharge) 8 kV (contact discharge) MIL STD 883G - Method 3015-7 Class 3: 30 kV TM: IPAD is a trademeark of STMicroelectronics November 2006 Rev 1 1/9 www.st.com 9 Characteristics EMIF06-10006C2 1 Characteristics Figure 2. Basic cell configuration 100 100 Input 1 Output 1 Input 4 Output 4 30 pF 30 pF 30 pF 30 pF 100 100 Input 2 Output 2 Input 5 Output 5 30 pF 30 pF 30 pF 30 pF 100 100 Input 3 Output 3 Input 6 Output 6 30 pF 30 pF 30 pF 30 pF Table 1. Absolute Ratings (limiting values) Symbol Parameter and test conditions Value Unit P DC power per resistance 0.1 W R P Total DC power per package 0.6 W T T Maximum junction temperature 125 C j T Operating temperature range - 40 to + 85 C op T Storage temperature range 125 C stg Table 2. Electrical Characteristics (T = 25 C) amb Symbol Parameter I V Breakdown voltage BR IF I Leakage current V RM RM V Stand-off voltage RM VF V Clamping voltage CL VCL VBR VRM V IRM R Dynamic impedance d IR I Peak pulse current PP R Series resistance between Input and output I/O IPP C Capacitance per line line Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 5.5 7 9 V BR R I V = 3.3 V per line 500 nA RM RM R I = 10 mA 80 100 120 I/O C V = 2.5 V, F = 1 MHz, 30 mV (on filter cells) 50 60 70 pF line R 2/9