EMIF04-1K030F3 4-line IPAD, EMI filter including ESD protection Datasheet production data Features 4-line EMI symmetrical (I/O) low-pass filter High efficiency in ESD suppression on input pins (IEC 61000-4-2 level 4) Very low PCB space consumption Very thin package High efficiency in EMI filtering Flip-Chip package High reliability offered by monolithic integration (9 bumps) High reduction of parasitic elements through integration and wafer level packaging Figure 1. Pin configuration (bump side) Lead-free package 3 21 Complies with the following standards: IEC 61000-4-2 level 4 I2 I1 O1 A 15 kV (air discharge) 8 kV (contact discharge) Application GND O2 I3 B Where EMI filtering in ESD sensitive equipment is required: I4 O3 C O4 Mobile phones and communication systems Computers, printers and MCU boards Description Figure 2. Functional schematic The EMIF04-1K030F3 chip is a highly integrated device designed to suppress EMI/RFI noise for interface line filtering. R = 1k Ix Ox The EMIF04-1K030F3 is 4-line, ultra compact, high attenuation filter available in 0.4 mm pitch WLCSP package. Additionally, this filter includes 15pF 15pF ESD protection circuitry, which prevents damage to the protected device when subjected to ESD surges up 20 kV. TM: IPAD is a trademark of STMicroelectronics. August 2013 DocID024627 Rev 1 1/8 This is information on a product in full production. www.st.com 8Characteristics EMIF04-1K030F3 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit ESD discharge IEC 61000-4-2, level 4: V Air discharge 30 kV PP Contact discharge 20 T Maximum junction temperature 125 C j T Operating temperature range - 40 to + 85 C OP T Storage temperature range - 55 to +150 C stg Figure 3. Electrical characteristics (definitions) Symbol P arameter V BR = Breakdown voltage V CL I RM = Leakage current V RM V RM = Stand-off voltage V CL = Clamping voltage I PP = Peak pulse current C line = Line capacitance R Series resistance between I/O = PP input and ouptput Table 2. Electrical characteristics (T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit I V = 5 V per line 300 nA RM RM V I = 1 mA 6 V BR R R 1k I/O C V = 0 V, V = 30 mV, F = 1 MHz 24 30 pF line line osc 2/8 DocID024627 Rev 1